A method of making an electron permeable window is provided which entails depositing a thin film (31) of an inert, high strength material or compound having a low atomic number onto a substrate (33) by chemical vapor deposition (CVD). Following that deposition, a window pattern and window support perimeter are photolitho-graphically defined and the substrate is etched to leave the desired window assembly (35). For a particular class of materials including SiC, BN, B 4 C, Si 3 N 4 , and A1 4 C 3 , films are provided which are exceedingly tough and pinhole free, and which exhibit nearly zero internal stress. Furthermore, due to their extreme strength, these materials allow fabrication of extremely thin windows. In addition, because of their low atomic number and density, they have excellent electron penetration characteristics at low beam voltages (15 to 30kV), so that most conventional CRT deflection schemes can be used to direct the beam. Also, such films are remarkably resilient and chemically inert even when very thin and can easily withstand large pressure differences.