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公开(公告)号：EP0153096A2
公开(公告)日：1985-08-28
申请号：EP85300817.5
申请日：1985-02-07
IPC分类号： G03F1/00
CPC分类号： G03F1/22 , Y10T428/265
摘要： @ A structure for use in a X-ray membrane (pellicle) mask is provided in which anodic bonding of layers is employed. Anodic bonding as used here provides a permanent bond between the layers, has zero thickness and provides substantial improvements in the obtained flatness of the mask by eliminating conventional glue for attachment. By applying a voltage between a layer, such as silicon, and a glass plate, and simultaneously heating both elements a permanent bond is established which is extremely flat thus providing minimum misalignment of the mask during subsequent X-ray lithography fabrication.
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公开(公告)号：EP0153096B1
公开(公告)日：1990-02-07
申请号：EP85300817.5
申请日：1985-02-07
IPC分类号： G03F1/00
CPC分类号： G03F1/22 , Y10T428/265
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公开(公告)号：EP0015495A1
公开(公告)日：1980-09-17
申请号：EP80100970.5
申请日：1980-02-27
CPC分类号： G01N27/626 , G01N30/70
摘要： Ein Elektroneneinfangdetektor mit einer thermion' sehen Quelle, beispielsweise einem Heizfaden (12) gibt Elektronen für die Reaktion in einer Quellenkammer (6) ab. Diese enthält eine Öffnung zu einer Detektionskammer (8) mit einem Kollektor (22). In die Quellenkammer wird Schutzgas und in die Detektionskammer wird Probengas eingeführt, und in der Detektionskammer ist eine Entlüftungsöffnung vorgesehen.
摘要翻译： 与热离子源的电子捕获检测器，例如一个灯丝（12），用于从源室中的反应的电子（6）。 这包括一个开口，以检测腔室（8），具有集电极（22）。 在源室是惰性气体，并在检测室样品气体被引入并且在检测室中的Entlüftungsoffnung设置。
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公开(公告)号：EP0150129B1
公开(公告)日：1988-06-15
申请号：EP85300440.6
申请日：1985-01-23
发明人： Siddall, Graham J. , Eaton, Steven Glen , Kruger, James B. , Garrettson, Garrett A. , Neukermans, Armand P.
IPC分类号： G03B41/00
CPC分类号： G03F7/70425 , G03F7/70433
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公开(公告)号：EP0230348A2
公开(公告)日：1987-07-29
申请号：EP87300110.1
申请日：1987-01-07
发明人： Garrettson, Garrett A. , Chao, Clinton C. , Neukermans, Armand P. , Leslie, Brian C. , Foster, Jack D. , Greenstein, Michael , Matta, Farid , Joly, Robert
IPC分类号： G01R1/073
CPC分类号： G01R1/0735
摘要： A test probe for integrated circuits is presented. This probe has a flexible membrane with leads and contacts formed with lithographic techniques. The leads can be formed to minimize voltage reflections and crosstalk. Also, termination devices can be added near the device under test in order to match the impedance of the device under test. This combination facilitates the testing of high density integrated circuits at high frequencies while the circuits are still on the wafer. Also, high density substrates for multi-chip carriers can be tested with this probe.
摘要翻译： 介绍了集成电路的测试探针。 该探头具有柔性膜，其具有由平版印刷技术形成的引线和触点。 可以形成引线以最小化电压反射和串扰。 此外，终端设备可以在被测设备附近添加，以匹配被测设备的阻抗。 这种组合有助于在电路仍然在晶片上的高频下测试高密度集成电路。 此外，可以使用该探头测试多芯片载体的高密度基板。
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公开(公告)号：EP0110532A3
公开(公告)日：1984-11-28
申请号：EP83306263
申请日：1983-10-14
发明人： Boyden, James H. , Garrettson, Garrett A. , Hanlon, Lawrence R. , Bradbury, Donald R. , Groves, Timothy R. , Neukermans, Armand P.
IPC分类号： B41J03/04
CPC分类号： B41J2/14104 , B41J2002/14387
摘要： A new type of thermal ink jet print head is provided which is driven by an electron beam. The print head is constructed of an electron permeable thin film (87) (electron window) which in one embodiment, has on one of its surfaces a plurality of electron absorbing (heater) pads (101) that are in thermal contact with an ink reservoir. As electrons from a CRT traverse the thin film and are absorbed by a pad, they introduce an extremely large and rapid temperature increase in the pad. As a result, a sufficient amount of thermal energy is absorbed by the ink to cause a vapor explosion within the ink. thereby ejecting ink droplets from a nearby orifice (91) in the ink reservoir. In another embodiment. the electrons traverse the window and are absorbed in the ink rather than in pads, and in another embodiment the electrons are absorbed directly in the window itself.
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公开(公告)号：EP0113168A2
公开(公告)日：1984-07-11
申请号：EP83306262.3
申请日：1983-10-14
摘要： A method of making an electron permeable window is provided which entails depositing a thin film (31) of an inert, high strength material or compound having a low atomic number onto a substrate (33) by chemical vapor deposition (CVD). Following that deposition, a window pattern and window support perimeter are photolitho-graphically defined and the substrate is etched to leave the desired window assembly (35). For a particular class of materials including SiC, BN, B 4 C, Si 3 N 4 , and A1 4 C 3 , films are provided which are exceedingly tough and pinhole free, and which exhibit nearly zero internal stress. Furthermore, due to their extreme strength, these materials allow fabrication of extremely thin windows. In addition, because of their low atomic number and density, they have excellent electron penetration characteristics at low beam voltages (15 to 30kV), so that most conventional CRT deflection schemes can be used to direct the beam. Also, such films are remarkably resilient and chemically inert even when very thin and can easily withstand large pressure differences.
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公开(公告)号：EP0113168A3
公开(公告)日：1984-11-28
申请号：EP83306262
申请日：1983-10-14
摘要： A method of making an electron permeable window is provided which entails depositing a thin film (31) of an inert, high strength material or compound having a low atomic number onto a substrate (33) by chemical vapor deposition (CVD). Following that deposition, a window pattern and window support perimeter are photolitho-graphically defined and the substrate is etched to leave the desired window assembly (35). For a particular class of materials including SiC, BN, B 4 C, Si 3 N 4 , and A1 4 C 3 , films are provided which are exceedingly tough and pinhole free, and which exhibit nearly zero internal stress. Furthermore, due to their extreme strength, these materials allow fabrication of extremely thin windows. In addition, because of their low atomic number and density, they have excellent electron penetration characteristics at low beam voltages (15 to 30kV), so that most conventional CRT deflection schemes can be used to direct the beam. Also, such films are remarkably resilient and chemically inert even when very thin and can easily withstand large pressure differences.
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公开(公告)号：EP0113168B1
公开(公告)日：1988-06-01
申请号：EP83306262.3
申请日：1983-10-14
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公开(公告)号：EP0110532B1
公开(公告)日：1987-08-19
申请号：EP83306263.1
申请日：1983-10-14
发明人： Boyden, James H. , Garrettson, Garrett A. , Hanlon, Lawrence R. , Bradbury, Donald R. , Groves, Timothy R. , Neukermans, Armand P.
IPC分类号： B41J3/04
CPC分类号： B41J2/14104 , B41J2002/14387
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