发明公开
EP0116789A1 Method of producing a semiconductor device having isolation regions between elements
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制造与单元之间的隔离区域的半导体器件的方法。
- 专利标题： Method of producing a semiconductor device having isolation regions between elements
- 专利标题（中）： 制造与单元之间的隔离区域的半导体器件的方法。
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申请号： EP83307977.5申请日： 1983-12-23
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公开(公告)号： EP0116789A1公开(公告)日： 1984-08-29
- 发明人: Goto, Hiroshi
- 申请人： FUJITSU LIMITED
- 申请人地址： 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP
- 代理机构： Sunderland, James Harry
- 优先权： JP228400/82 19821227
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A semiconductor device of transistors, each of which is surrounded with a field oxide film (7), uses a dielectric isolation structure of a groove filled with an insulating material (15) instead of a PN junction isolation stucture. The field oxide film (7) is formed by selectively oxidizing an epitaxial layer (3), then the groove extending through the epitaxial layer (3) and a buried layer (2) is formed. After the surface of the groove is covered with an insulating film, e.g., a thermal oxide film (14) by oxidizing the surface, the groove is filled with the filler material (15).
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