发明公开
- 专利标题: Integrated pressure sensor
- 专利标题(中): 集成压力传感器
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申请号: EP84106127申请日: 1984-05-29
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公开(公告)号: EP0127176A3公开(公告)日: 1986-02-19
- 发明人: Yamada, Kazuji , Kobori, Shigeyuki , Shimada, Satoshi , Kanzawa, Ryosaku , Kobayashi, Ryoichi , Sato, Hideo
- 申请人: HITACHI, LTD.
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 优先权: JP9747783 19830531
- 主分类号: G01L09/06
- IPC分类号: G01L09/06
摘要:
In an integrated pressure sensor, a silicon chip (10) for pressure detection and a substrate (22) for supporting the silicon chip are made of the same material, the silicon chip (10) has a thin diaphragm portion (14) and a peripheral fixed portion (12) thicker than the diaphragm portion (14), and the silicon chip (10) is bonded to the substrate (22) through a thin insulating film (20).
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