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公开(公告)号：EP0202786A3
公开(公告)日：1987-09-30
申请号：EP86303078
申请日：1986-04-23
申请人： HONEYWELL INC.
发明人： Rosenberger, Mark E.
IPC分类号： G01L09/06
CPC分类号： G01L19/142 , G01L19/0084 , G01L19/146 , G01L19/147 , Y10T29/49103
摘要： A low cost piezoresistive pressure transducer utilizing premoulded elastomeric seals and adapted for automatic assembly, and a method of producing the transducer. A piezoresistive stress sensitive element 32 in the form of a diaphragm of semiconductor material having a thickened rim is held at its rim between a pair of premoulded elastomeric seals 26, 27 in a thermoplastic housing 11, 16, 20. Electrical connections 14a, 14b with external circuitry are made with strain relief jumpers which connect conductive regions on the element outside the seals to conductors which pass through the housing wall.
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公开(公告)号：EP0126907A3
公开(公告)日：1988-03-02
申请号：EP84103678
申请日：1984-04-04
申请人： HITACHI, LTD.
发明人： Yamada, Kazuji , Sato, Hideo , Kawakami, Kanji , Kato, Kazuo , Sasayama, Takao
CPC分类号： G01L1/2281 , G01L9/065
摘要： A semiconductor-type pressure transducer is disclosed in which the pressure change is detected as a resistance change by use of a bridge circuit including at least a gage resistor (G 1 , G 2 , G 3 , G 4 ) changing with an external force. Each gage resistor is made of a PN junction of a semiconductor. The pressure transducer further comprises an amplification factor compensator (G s ) for cancelling the effect of the temperature change of the gage resistors making up the bridge circuit on the amplification factor of the amplification circuit (OP2) for amplifying the output of the bridge circuit.
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公开(公告)号：EP0135653A3
公开(公告)日：1985-10-23
申请号：EP84103775
申请日：1984-04-05
CPC分类号： G01L19/142 , G01L19/0084 , G01L19/0645 , G01L19/14 , G01L19/147
摘要： Die Erfindung betrifft eine Vorrichtung zur Messung von hohen Drücken und Temperaturen in einem hydraulischen oder pneumatischen System, vorzugsweise mit Hilfe einer piezoresistiven Druckmeßzelle und einer elektronischen Schaltung, welche in einem Gehäuse zu einer Baueinheit integriert ist, wobei diese ein Schraubgehäuse aufweist, welches in einen den Drucksensor enthaltenden Druckraum und einen durch Bohrungen für elektrische Kontakte oder Anschlußpfosten verbundenden, die zugehörige elektroni sche Schaltung enthaltenden drucklosen Raum aufgeteilt ist, und der Druckraum mit einem inkrompressiblen Druck übertragungsmedium gefüllt und mittels einer Drucküber tragungsmembrane zur Druckseite des Systems abge schlossen ist, wobei in dem Druckraum eine über den Druck desselben wirkende Sensor-Justiervorrichtung angeordnet ist.
Das den Druckraum des Schraubgehäuses begrenzen de und die Druckübertragungsmembrane aufnehmende Ringsystem weist eine Radialbohrung auf, welche durch ein den Druck des Druckraumes justierbaren Element ver schlossen ist.
Dieses Element ist beispielsweise als Kugel ausgebil det, welche zur Druckjustierung des Drucksensors mit ei nem definierten Druck in die Radialbohrung einsetzbar aus gebildet ist.-
公开(公告)号：EP0115074A3
公开(公告)日：1985-09-25
申请号：EP83113139
申请日：1983-12-27
CPC分类号： G01L19/147 , G01L13/025 , G01L19/0038 , G01L19/0645 , G01L19/142
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公开(公告)号：EP0083496A3
公开(公告)日：1983-08-31
申请号：EP82306874
申请日：1982-12-22
申请人： HONEYWELL INC.
发明人： Starr, James B.
CPC分类号： G01L9/0054 , G01L9/065
摘要： The pressure transducer includes a single crystal semiconductor chip (1) having a cavity (3) formed in one surface to define a diaphragm region, a tube (5) to communicate pressure to the cavity is bonded to the chip, pressure measuring sensors (13,14,17,18) are disposed on the chip in the diaphragm region and additional pressure-responsive sensors (23, 24, 27, 28) are disposed on the chip outside the diaphragm region to provide a signal for compensating for zero shift temperature and pressure induced signals generated by the measuring sensors.
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6.发明公开Method for the temperature compensation and measuring circuit for this method 失效温度补偿和温度补偿方法本方法的温度补偿和测量电路的方法
公开(公告)号：EP0169414A3
公开(公告)日：1988-07-27
申请号：EP85108246
申请日：1985-07-03
CPC分类号： G01L1/2281 , G01L9/065
摘要： Eine Meßschaltung zur Durchführung eines Kompensati onsverfahrens insbesondere für einen piezoresistiven Druck aufnehmer mit einer Meßbrücke (7) und einem nachgeord neten Ausgangs-Differenzverstärker (15) umfaßt ferner eine Stromversorgungsschaltung (13). Um eine optimale Tempe raturkompensation für die Meßbrücke (7) bei maximaler Auflösung des Druckmeßsignals zu ermöglichen, ist vorge sehen, daß dem Ausgangs-Differenzverstärker (15) eine digitalisierte Kompensationsschaltung mit einem Analog- Digital-Wandler (21), einem Speicher (23) und zumindest einem weiteren Digital-Analog-Wandler (25, 27) vorgeordnet sind. Das temperaturabhängige Spannungsdifferenz- Eingangssignal an der Meßbrücke (7) wird über den nachge ordneten Wandler (21) digitalisiert und entsprechend in dem Speicher (23) abgespeicherte Kompensationswerte umge wandelt. Danach werden diese Werte erneut in ein analoges Kompensationssignal in einem Wandler (25, 27) umgewan delt. Bei an sich analoger Meßwertermittlung wird also allein die Fehlerkompensation auf digitalisiertem Wege durchge führt.
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公开(公告)号：EP0118605A3
公开(公告)日：1985-05-29
申请号：EP83111718
申请日：1983-11-23
申请人： HITACHI, LTD.
发明人： Tanabe, Masanori , Kawakami, Kanji
CPC分类号： G01L1/18 , G01D5/18 , G01L9/0098 , G01L9/06 , Y10T307/786
摘要： The drain voltage of an IG FET (T,) having a channel responsive to the change in physical quantity to be measured is negatively fed back to the gate terminal of the IG FET. The negative feedback loop includes series connection of a first amplifier (A,) having an amplification factor larger than unity and a second amplifier (N,) having an amplification factor smaller than unity. The interconnection point between the first and the second amplifiers is connected to the output terminal. There is provided a stable, highly sensitive and highly reliable semiconductor sensor.
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公开(公告)号：EP0111640A3
公开(公告)日：1985-05-15
申请号：EP83109254
申请日：1983-09-19
IPC分类号： G01L09/06
CPC分类号： G01L9/0054 , G01L19/147 , Y10S73/04
摘要： Provided is a pressure sensor of semiconductor type. having a semiconductor diaphragm (41), wherein the diaphragm comprises at least one of thin wall parts (43) and at least one of thick wall parts (44), and defines therein recesses (42) formed in the lower surface of the diaphragm below the thin wall parts, piezoresistance elements (47, 48) are laid on the upper surface of the diaphragm near or in the thin wall parts, and a supporting member (45) is sealingly jointed to the thick wall parts (44) at the lower surface of the diaphragm, thereby the recesses (42) are sealed and confined so as to prevent high pressure fluid from blowing off when the thin wall part (43) is broken.
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公开(公告)号：EP0053486A3
公开(公告)日：1984-05-30
申请号：EP81305595
申请日：1981-11-26
申请人： HONEYWELL INC.
发明人： Johnson, Russell L.
CPC分类号： G01L9/0054 , G01L1/2281 , G01L9/065
摘要： A stress sensor includes a body (100) of semiconductor material defining diaphragm (101) and diaphragm constraint portions (102), one or more stress sensing semiconductor piezoresistive domain(s) (103,104; RA, RB, RC, RD) formed at least partly in a major surface of the diaphragm portion, and a signal processing circuit receiving the output of the domain(s) to provide an output signal in response to stress applied to the diaphragm. The circuit includes means for compensating for the effects of temperature on the stress sensor, the means including a first type of resistive domain (R1, R2) formed in said major surface of the body by doping with a semiconductor material of the same conductivity type as the first mentioned domain, the resistive domain having a temperature coefficient of resistance substantially the same as that of the piezoresistive domain, and being located so as to be substantially insensitive to the applied stress, and a second type of resistive domain (R0, R6, R7, R25, R26) supported by said body adjacent said major surface, said second type of domain having a temperature coefficient of resistance substantially less than that of the piezoresistive domain and being located so as to be substantially insensitive to the applied stress.
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公开(公告)号：EP0198695A3
公开(公告)日：1988-04-20
申请号：EP86302733
申请日：1986-04-11
CPC分类号： G01K7/20 , F16H59/68 , F16H59/72 , F16H2059/683 , G01L9/065
摘要： A pressure sensor (33) is provided by a bridge circuit on a semiconductor diaphragm (44), with diaphragm deflection being effective to produce an output voltage proportional to the deflecting force. A constant current source (62) is coupled to the energizing terminals of the bridge circuit. By measuring the voltage drop across the semiconductor bridge during operation, an output signal indicative of bridge temperature is obtained. Accordingly two output signals, pressure (32) and temperature (35), are derived from a single bridge sensor (33). This produces a compact, accurate transducer assembly for use in an automotive control system, providing two control signals from a single sensor structure.
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