晶片（11）的表面上的光致抗蚀剂层（12）通过的阴影图案，其产生露出的前端安装在短距离传输掩模（13）时，这是进行大面积的电子束。 电子束源是从后方UV辐射暴露utraviolett透过的载体（石英玻璃17）上未图案化的光电阴极（16）。 由所述层（16）出现的电子被均匀电场（14）上加速并形成为均匀的准直的电子束在掩模（13）加速。 与侧面安装的静电偏转电极（19A，19B），用于将掩模图案的调整的整个电子束被相对于晶片倾斜。

The photoresist layer (12) on the surface of a wafer (11) is exposed through the shadow patterns, which produces a small distance in front Inappropriate transmission mask (13) when it is exposed to a large-area electron beam. The source of the electron beam is an unpatterned photocathode (16) on an ultraviolet-permeable support (quartz glass 17) which is exposed from the rear UV radiation. The out of the layer (16) ejected electrons are a homogeneous electric field (14) on the mask (13) accelerated towards and into a homogeneous collimated electron beam. With side-mounted electrostatic deflection electrodes (19a, 19b) can be of the entire electron beam is tilted for adjustment of the mask pattern relative to the wafer.