发明授权
EP0134716B1 Process for high temperature drive-in diffusion of dopants into semiconductor wafers 失效
高温驱动剂掺入半导体波长的方法

  • 专利标题: Process for high temperature drive-in diffusion of dopants into semiconductor wafers
  • 专利标题(中): 高温驱动剂掺入半导体波长的方法
  • 申请号: EP84305792.8
    申请日: 1984-08-23
  • 公开(公告)号: EP0134716B1
    公开(公告)日: 1991-03-13
  • 发明人: Russo, Carl Joseph
  • 申请人: VARIAN ASSOCIATES, INC.
  • 申请人地址: 611 Hansen Way Palo Alto, CA 94303 US
  • 专利权人: VARIAN ASSOCIATES, INC.
  • 当前专利权人: VARIAN ASSOCIATES, INC.
  • 当前专利权人地址: 611 Hansen Way Palo Alto, CA 94303 US
  • 代理机构: Cline, Roger Ledlie
  • 优先权: US527140 19830829
  • 主分类号: C30B31/12
  • IPC分类号: C30B31/12
Process for high temperature drive-in diffusion of dopants into semiconductor wafers
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