发明公开
- 专利标题: Resistive gate field effect transistor logic family
- 专利标题(中): 逻辑家庭及Widerstandstor场效应晶体管。
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申请号: EP84110056.3申请日: 1984-08-23
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公开(公告)号: EP0137257A2公开(公告)日: 1985-04-17
- 发明人: Bertin, Claude Louis
- 申请人: International Business Machines Corporation
- 申请人地址: Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构: Mönig, Anton, Dipl.-Ing.
- 优先权: US530450 19830908
- 主分类号: H01L29/62
- IPC分类号: H01L29/62 ; H03K19/094
摘要:
@ A family of digital logic circuits constructed with resistive gate field effect transistors is provided. The logic circuits are comprised of AND and OR circuits, each implemented with resistive gate devices. In constructing an AND circuit (Figure 1 the resistive gate (6) lies along the length of the channel region between the source (2) and drain (4) of the device. Logic input signals (at 10, 12, 13) are selectively applied along the length of the channel region to the resistive gate. The device will conduct between source and drain only if all points along the channel are above the local threshold voltage of the channel region which will occur when appropriate logic signals are applied simultaneously to all logic input terminals. A logic OR device (Figure 6) is realized when the resistive gate (45) is formed transverse to the channel such that each input to the gate controls a portion of the channel between the source (44) and drain (42). NAND and NOR circuits are provided using the resistive gate logic device in an inverting circuit context.
公开/授权文献
- EP0137257B1 Resistive gate field effect transistor logic family 公开/授权日:1989-01-25
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