发明公开
- 专利标题： Magneto-optic memory element
- 专利标题（中）： 磁 - 光存储元件。
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申请号： EP84306341.3申请日： 1984-09-17
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公开(公告)号： EP0139474A2公开(公告)日： 1985-05-02
- 发明人: Takahashi, Akira , Murakami, Yoshiteru , Hirokane, Junji , Katayama, Hiroyuki , Ohta, Kenji , Yamaoka, Hideyoshi
- 申请人： SHARP KABUSHIKI KAISHA
- 申请人地址： 22-22 Nagaike-cho Abeno-ku Osaka 545 JP
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： 22-22 Nagaike-cho Abeno-ku Osaka 545 JP
- 代理机构： Wright, Peter David John (GB)
- 优先权： JP171488/83 19830916; JP139434/84 19840703; JP146234/84 19840713
- 主分类号： G11B11/10
- IPC分类号： G11B11/10
摘要：
A magneto-optic memory element inctades a transparent substrate, a first transparent nitride film, a GdTbFe recording layer, a second transparent nitride film, and a reflection film formed in this order. The first transparent nitride film has an index of refraction higher than that of the second transparent nitride film. In a preferred form, the first transparent nitride film is a SiN film having the index of refraction of about 2.0, and the second transparent nitride film is an AIN film having the index of refraction of about 1.8 to 1.9.
公开/授权文献
- EP0139474B1 Magneto-optic memory element 公开/授权日：1990-04-04
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