发明公开
- 专利标题： Level substrate for semiconducting devices and method for fabricating same
- 专利标题（中）： 用于半导体器件的级衬底及其制造方法
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申请号： EP85301402申请日： 1985-02-28
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公开(公告)号： EP0155125A3公开(公告)日： 1986-09-17
- 发明人: Nath, Prem , Izu, Masatsugu , Ovshinsky, Herbert C. , Tennenhouse, Clifford , Young, James
- 申请人： ENERGY CONVERSION DEVICES, INC.
- 专利权人： ENERGY CONVERSION DEVICES, INC.
- 当前专利权人： ENERGY CONVERSION DEVICES, INC.
- 优先权： US586365 19840305
- 主分类号： H01L31/02
- IPC分类号： H01L31/02 ; H01L21/20
摘要：
An improved semiconductor device includes a substrate (11) having a deposition surface, including at least one defect region (30, 32) capable of providing a low resistance shunt path or a nucleation centre, a relatively thick, continuous, electrically conductive leveling layer (26) electroplated on the deposition surface to provide a substantially defect-free surface, and a semiconductor body (27) deposited on the leveling layer. The substrate (11) is formed of aluminium or stainless steel while the leveling layer is preferably formed of nickel or silver.
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