发明授权
- 专利标题： COMMON MODE SIGNAL DETECTOR
- 专利标题（中）： 通用模式信号检测器
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申请号： EP84903393.1申请日： 1984-09-04
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公开(公告)号： EP0157799B1公开(公告)日： 1988-03-02
- 发明人: BANU, Mihai
- 申请人： AT&T Corp.
- 申请人地址： 32 Avenue of the Americas New York, NY 10013-2412 US
- 专利权人： AT&T Corp.
- 当前专利权人： AT&T Corp.
- 当前专利权人地址： 32 Avenue of the Americas New York, NY 10013-2412 US
- 代理机构： Buckley, Christopher Simon Thirsk
- 优先权： US539619 19831006
- 国际公布： WO8501622 19850411
- 主分类号： H03F3/45
- IPC分类号： H03F3/45 ; G06G7/14
摘要：
A common mode detector (10) for producing an output voltage (VA + VB)/2 in response to input voltages VA and VB contains a pair of MOS transitors (MA and MB) connected in series between a pair of input terminals A and B to which the input voltages (VA and VB) are to be applied. A separate feedback path runs from each input terminal (A, B) through a separate load device (LA2, LB2) to a gate control terminal of the respective MOS transistor (MA, MB) and a separate other feedback path runs from each input terminal (A, B) through a separate other load device (LA3, LB3) to a substrate terminal (SA, SB) of the respective MOS transistors. In this way, the respective feedback paths deliver to the respective gate terminals respective voltages equal to (VDD + VA)/2 and (VDD + VB)/2, respectively, while the other feedback paths deliver to the substrates of the respective MOS transistors (MA, MB) respective substrate bias voltages equal to (VSS + VA)/2 and (VSS + VB)/2, whereby the common mode voltage (VA + VB)/2 is developed at a node (AB) between the pair of MOS transistors (MA, MB).
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