发明公开
- 专利标题： Double heterostructure light-emitting semiconductor device
- 专利标题（中）： 一种发光半导体器件双异质结构。
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申请号： EP85300950.4申请日： 1985-02-13
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公开(公告)号： EP0166498A1公开(公告)日： 1986-01-02
- 发明人: Komatsubara, Tadashi c/o Patent Division , Sadamasa, Tetsuo c/o Patent Division
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 代理机构： Freed, Arthur Woolf
- 优先权： JP108793/84 19840529
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
Adoubleheterostructure light-emitting semiconductor device including a p-GaAs substrate having a first electrode (27) formed on one surface and a current-confining layer (22) on the other surface.
A confined current conduction layer (29) is formed in the current-confining layer (22) and a light-emitting layer structure (30) is formed on these layers.
A capping layer (26) of GaAs having a second electrode (28) is formed on the light-emitting layer structure.
A light exit window layer (31) for exciting the emitted light is constructed by a thin film of the capping layer.
A confined current conduction layer (29) is formed in the current-confining layer (22) and a light-emitting layer structure (30) is formed on these layers.
A capping layer (26) of GaAs having a second electrode (28) is formed on the light-emitting layer structure.
A light exit window layer (31) for exciting the emitted light is constructed by a thin film of the capping layer.
公开/授权文献
- EP0166498B1 Double heterostructure light-emitting semiconductor device 公开/授权日：1988-09-28
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