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公开(公告)号：EP0166498A1
公开(公告)日：1986-01-02
申请号：EP85300950.4
申请日：1985-02-13
IPC分类号： H01L33/00
CPC分类号： H01L33/145
摘要： Adoubleheterostructure light-emitting semiconductor device including a p-GaAs substrate having a first electrode (27) formed on one surface and a current-confining layer (22) on the other surface.
A confined current conduction layer (29) is formed in the current-confining layer (22) and a light-emitting layer structure (30) is formed on these layers.
A capping layer (26) of GaAs having a second electrode (28) is formed on the light-emitting layer structure.
A light exit window layer (31) for exciting the emitted light is constructed by a thin film of the capping layer.-
公开(公告)号：EP0166498B1
公开(公告)日：1988-09-28
申请号：EP85300950.4
申请日：1985-02-13
IPC分类号： H01L33/00
CPC分类号： H01L33/145
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公开(公告)号：EP0216572A2
公开(公告)日：1987-04-01
申请号：EP86306984.5
申请日：1986-09-10
发明人： Kuroda, Fumihiko c/o Patent Division , Sadamasa, Tetsuo c/o Patent Division , Suzuki, Nobuo c/o Patent Division , Nakamura, Masaru c/o Patent Division
IPC分类号： H01L31/10 , H01L21/265
CPC分类号： H01L21/26546 , H01L31/105 , H01L31/1075
摘要： A semiconductor photo-detector having a two-stepped impurity profile comprises a semiconductor substrate (10), a light absorption layer (14) of a first conductivity type formed on a semiconductor substrate, a multiplication layer (18) of a first conductivity type formed on the light d bsorption layer to multiply a photocurrent, a semiconductor region (22) of a second conductivity type formed on the multiplication layer and constituting an abrupt pn junction with the multiplication layer, and a guard ring area (38) of a second conductivity type formed around a periphery of the semiconductor region, whereby the carrier concentration profile of the guard ring region is sharp at its surface and flat below that surface.
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公开(公告)号：EP0216572B1
公开(公告)日：1995-04-05
申请号：EP86306984.5
申请日：1986-09-10
发明人： Kuroda, Fumihiko c/o Patent Division , Sadamasa, Tetsuo c/o Patent Division , Suzuki, Nobuo c/o Patent Division , Nakamura, Masaru c/o Patent Division
IPC分类号： H01L31/10 , H01L21/265
CPC分类号： H01L21/26546 , H01L31/105 , H01L31/1075
摘要： A semiconductor photo-detector having a two-stepped impurity profile comprises a semiconductor substrate, a light absorption layer of a first conductivity type formed on a semiconductor substrate, a multiplication layer of a first conductivity type formed on the light absorption layer to multiply a photocurrent, a semiconductor region of a second conductivity type formed on the multiplication layer and constituting an abrupt pn junction with the multiplication layer, and a guard ring area of a second conductivity type formed around a periphery of the semiconductor region, whereby the carrier concentration profile of the guard ring region is sharp at its surface and flat below that surface.
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5.发明公开Semiconductor photo-detector having a two-stepped impurity profile 失效具有两步输入特性的SEMICONDUCTOR PHOTO-DETECTOR
公开(公告)号：EP0216572A3
公开(公告)日：1989-07-19
申请号：EP86306984.5
申请日：1986-09-10
发明人： Kuroda, Fumihiko c/o Patent Division , Sadamasa, Tetsuo c/o Patent Division , Suzuki, Nobuo c/o Patent Division , Nakamura, Masaru c/o Patent Division
IPC分类号： H01L31/10 , H01L21/265
CPC分类号： H01L21/26546 , H01L31/105 , H01L31/1075
摘要： A semiconductor photo-detector having a two-stepped impurity profile comprises a semiconductor substrate (10), a light absorption layer (14) of a first conductivity type formed on a semiconductor substrate, a multiplication layer (18) of a first conductivity type formed on the light d bsorption layer to multiply a photocurrent, a semiconductor region (22) of a second conductivity type formed on the multiplication layer and constituting an abrupt pn junction with the multiplication layer, and a guard ring area (38) of a second conductivity type formed around a periphery of the semiconductor region, whereby the carrier concentration profile of the guard ring region is sharp at its surface and flat below that surface.
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