发明公开
- 专利标题: X-ray exposure apparatus
- 专利标题(中): X射线曝光装置
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申请号: EP85113171申请日: 1985-10-17
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公开(公告)号: EP0178660A3公开(公告)日: 1988-04-20
- 发明人: Kembo, Yukio , Komeyama, Yoshihiro , Ikeda, Minoru , Inagaki, Akira
- 申请人: HITACHI, LTD.
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 优先权: JP21838384 19841019
- 主分类号: G03F07/20
- IPC分类号: G03F07/20
摘要:
Disclosed is an X-ray exposure apparatus having a low attenuation chamber (5) supplied with a gas absorbing little X-rays, the low attenuation chamber being interposed between an X-ray source (1) and a mask (9) so that X-rays (2) transmitted through the low attenuation chamber are irradiated on the mask so as to transfer a mask pattern onto a resist on a wafer (11), the apparatus comprising detecting means (13) for detecting the gas or components mixed in the gas in the low attenuation chamber, control means (14, 15, 16) for controlling a quantity of supply of the gas into the low attenuation chamber in accordance with an output signal of the detecting means, and/or adjusting means (21, 3) for adjusting a quantity of exposure of said X-rays irradiated on the mask in accordance with an output signal of the detecting means.
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