发明公开
EP0200082A3 Barrierless high-temperature Lift-off process for forming a patterned interconnection layer 失效
形成图形互连层的无障碍高温提升过程

Barrierless high-temperature Lift-off process for forming a patterned interconnection layer
摘要:
A lift-off metal deposition process in which a high-temperature polyimide layer (16) (i.e. a polyimide having a high imidization temperature) is applied to a first polyimide layer (14). The two layers (14, 16) are anisotropically etched through a photoresist mask to form via holes in the first polyimide layer (14). After application of a metal layer (20), the high-temperature polyimide layer (16) is lifted off the first polyimide layer (14), which remains as a passivation layer.
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