公开(公告)号：EP0200082B1

公开(公告)日：1992-07-08

申请号：EP86105142.3

申请日：1986-04-15

申请人： International Business Machines Corporation

发明人： Clodgo, Donna Jean ,  Previti-Kelly, Rosemary Ann ,  Walton, Erick Gregory

IPC分类号： H01L21/90

CPC分类号： H01L21/7688 ,  H01L21/0271 ,  H01L21/0272 ,  H01L21/31133 ,  H05K3/143 ,  Y10S438/951

公开(公告)号：EP0421053A3

公开(公告)日：1992-06-10

申请号：EP90110403.4

申请日：1990-06-01

申请人： International Business Machines Corporation

发明人： Previti-Kelly, Rosemary Ann

IPC分类号： H01L21/027 ,  G03F7/038

CPC分类号： H01L21/28 ,  H01L21/0272 ,  Y10S148/075 ,  Y10S148/10 ,  Y10S438/951

摘要： Disclosed is a process for forming a pattern of metallization (3) on a processed semiconductor substrate (1), under high temperature conditions, employing a polyimide precursor material (2) as a lift-off layer. Advantageously, the material is photosensitive, and, after exposure and development, the portions of the layer remaining on the substrate can be completely and readily removed with con­ventional solvents.

摘要翻译： 公开了一种在高温条件下，使用聚酰亚胺前体材料（2）作为剥离层，在经处理的半导体衬底（1）上形成金属化图案（3）的工艺。 有利地，材料是光敏的，并且在曝光和显影之后，残留在基底上的层的部分可以用常规溶剂完全和容易地除去。

公开(公告)号：EP0455031A2

公开(公告)日：1991-11-06

申请号：EP91105940.0

申请日：1991-04-13

申请人： International Business Machines Corporation

发明人： Cronin, John Edward ,  Kaanta, Carter Welling ,  Previti-Kelly, Rosemary Ann ,  Ryan, James Gardner

IPC分类号： H01L21/768 ,  H01L21/312 ,  H01L23/485

CPC分类号： H01L21/76828 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a process for producing multi-level conductor/insulator films on a processed semiconductor substrate (2) having a conductor pattern (4). The insulator layers (1, 6), each comprise a photosensitive polyimide polymer composition, and this allows the desired wiring channels and stud vias to be formed directly in the insulator layers, without the use of separate masking layers and resulting image transfer steps, thus providing a less cumbersome and costly process.

摘要翻译： 公开了用于处理的半导体衬底（2）上制造多级导体/绝缘膜具有导体图案的处理（4）。 绝缘体层（1,6），每一个都包括光敏聚酰亚胺的聚合物组合物，并且这使所需布线通道和支柱的通孔，以在绝缘体层直接形成，而不使用单独的掩模层和产生的图像传送步骤，从而 提供不太笨重和昂贵的过程。

公开(公告)号：EP0588009A3

公开(公告)日：1994-12-14

申请号：EP93111136.3

申请日：1993-07-12

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Landis, Howard Smith ,  Machesney, Brian John ,  Parries, Paul ,  Previti-Kelly, Rosemary Ann ,  Rembetski, John Francis

IPC分类号： H01L21/3205 ,  H01L21/60 ,  H01L21/76 ,  H01L21/82 ,  H01L29/52

CPC分类号： H01L27/10861 ,  H01L21/76838 ,  H01L21/76897 ,  H01L29/41766 ,  Y10S438/943

摘要： A semiconductor fabrication process for forming borderless contacts (130, 170, 172) using a removable mandrel (110). The process involves depositing a mandrel on an underlying barrier layer (100) designed to protect underlying structures (40) formed on a substrate (24). The mandrel is made from a material that will etch at a faster rate than the barrier layer so as to permit the formation of openings in the mandrel to be stopped on the barrier layer without penetrating such layer. After depositing a contact (130) in a first opening (120) formed in the mandrel, a second opening (140) is formed and a second contact (170) is deposited therein. Thereafter, the mandrel is removed and replaced with a layer of solid dielectric material (180).

公开(公告)号：EP0588009A2

公开(公告)日：1994-03-23

申请号：EP93111136.3

申请日：1993-07-12

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Landis, Howard Smith ,  Machesney, Brian John ,  Parries, Paul ,  Previti-Kelly, Rosemary Ann ,  Rembetski, John Francis

IPC分类号： H01L21/3205 ,  H01L21/60 ,  H01L21/76 ,  H01L21/82 ,  H01L29/52

CPC分类号： H01L27/10861 ,  H01L21/76838 ,  H01L21/76897 ,  H01L29/41766 ,  Y10S438/943

摘要： A semiconductor fabrication process for forming borderless contacts (130, 170, 172) using a removable mandrel (110). The process involves depositing a mandrel on an underlying barrier layer (100) designed to protect underlying structures (40) formed on a substrate (24). The mandrel is made from a material that will etch at a faster rate than the barrier layer so as to permit the formation of openings in the mandrel to be stopped on the barrier layer without penetrating such layer. After depositing a contact (130) in a first opening (120) formed in the mandrel, a second opening (140) is formed and a second contact (170) is deposited therein. Thereafter, the mandrel is removed and replaced with a layer of solid dielectric material (180).

摘要翻译： 用于形成使用可移动心轴（110）无边界接触（130，170，172）的半导体制造工艺。 该方法涉及到设计用于保护形成在基板（24）下面的结构（40）下面的阻挡层（100）沉积的心轴。 该芯棒被从在比阻挡层快的速率蚀刻thatwill以便允许开口的形成在所述心轴在阻挡层上要被停止而不穿透求层的材料制成。 沉积在型芯上形成的第一开口（120）的接触（130）之后，第二开口（140）形成，并且第二接触（170）在其中沉积。 那里之后，心轴被移除，并用固体电介质材料（180）的层代替。

公开(公告)号：EP0455031A3

公开(公告)日：1992-04-22

申请号：EP91105940.0

申请日：1991-04-13

申请人： International Business Machines Corporation

发明人： Cronin, John Edward ,  Kaanta, Carter Welling ,  Previti-Kelly, Rosemary Ann ,  Ryan, James Gardner

IPC分类号： H01L21/768 ,  H01L21/312 ,  H01L23/485

CPC分类号： H01L21/76828 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a process for producing multi-level conductor/insulator films on a processed semiconductor substrate (2) having a conductor pattern (4). The insulator layers (1, 6), each comprise a photosensitive polyimide polymer composition, and this allows the desired wiring channels and stud vias to be formed directly in the insulator layers, without the use of separate masking layers and resulting image transfer steps, thus providing a less cumbersome and costly process.

公开(公告)号：EP0455032A2

公开(公告)日：1991-11-06

申请号：EP91105941.8

申请日：1991-04-13

申请人： International Business Machines Corporation

发明人： Cronin, John Edward ,  Kaanta, Carter Welling ,  Previti-Kelly, Rosemary Ann ,  Ryan, James Gardner ,  Lee, Pei-Ing Paul ,  Yoon, Jung Hoon

IPC分类号： H01L21/768 ,  H01L21/312 ,  H01L23/485

CPC分类号： H01L21/76828 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/12044 ,  H05K3/0023 ,  H05K3/045 ,  H05K3/107 ,  H05K3/465 ,  H05K3/467 ,  H05K2201/0154 ,  H01L2924/00

摘要： Disclosed is a process for producing multi-level conductor/insulator films on a processed semiconductor substrate (2) having a conductor pattern (4). The insulator layers (1, 6), each comprise a photosensitive polyimide polymer composition, and this allows the desired wiring channels and stud vias to be formed directly in the insulator layers, without the use of separate masking layers and resulting image transfer steps, thus providing a less cumbersome and costly process.

摘要翻译： 公开了用于处理的半导体衬底（2）上制造多级导体/绝缘膜具有导体图案的处理（4）。 绝缘体层（1,6），每一个都包括光敏聚酰亚胺的聚合物组合物，并且这使所需布线通道和支柱的通孔，以在绝缘体层直接形成，而不使用单独的掩模层和产生的图像传送步骤，从而 提供不太笨重和昂贵的过程。

公开(公告)号：EP0455031B1

公开(公告)日：1995-11-22

申请号：EP91105940.0

申请日：1991-04-13

申请人： International Business Machines Corporation

发明人： Cronin, John Edward ,  Kaanta, Carter Welling ,  Previti-Kelly, Rosemary Ann ,  Ryan, James Gardner

IPC分类号： H01L21/768 ,  H01L21/312 ,  H01L23/485

CPC分类号： H01L21/76828 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP0455032B1

公开(公告)日：1995-11-08

申请号：EP91105941.8

申请日：1991-04-13

申请人： International Business Machines Corporation

发明人： Cronin, John Edward ,  Kaanta, Carter Welling ,  Previti-Kelly, Rosemary Ann ,  Ryan, James Gardner ,  Lee, Pei-Ing Paul ,  Yoon, Jung Hoon

IPC分类号： H01L21/768 ,  H01L21/312 ,  H01L23/485

CPC分类号： H01L21/76828 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/12044 ,  H05K3/0023 ,  H05K3/045 ,  H05K3/107 ,  H05K3/465 ,  H05K3/467 ,  H05K2201/0154 ,  H01L2924/00

公开(公告)号：EP0421053A2

公开(公告)日：1991-04-10

申请号：EP90110403.4

申请日：1990-06-01

申请人： International Business Machines Corporation

发明人： Previti-Kelly, Rosemary Ann

IPC分类号： H01L21/027 ,  G03F7/038

CPC分类号： H01L21/28 ,  H01L21/0272 ,  Y10S148/075 ,  Y10S148/10 ,  Y10S438/951

摘要： Disclosed is a process for forming a pattern of metallization (3) on a processed semiconductor substrate (1), under high temperature conditions, employing a polyimide precursor material (2) as a lift-off layer. Advantageously, the material is photosensitive, and, after exposure and development, the portions of the layer remaining on the substrate can be completely and readily removed with con­ventional solvents.

摘要翻译： 公开了一种在高温条件下，使用聚酰亚胺前体材料（2）作为剥离层，在经处理的半导体衬底（1）上形成金属化图案（3）的工艺。 有利地，材料是光敏的，并且在曝光和显影之后，残留在基底上的层的部分可以用常规溶剂完全和容易地除去。