发明公开
EP0254065A3 Address multiplex type semi-conductor memory 失效
地址多类型半导体存储器

  • 专利标题: Address multiplex type semi-conductor memory
  • 专利标题(中): 地址多类型半导体存储器
  • 申请号: EP87109120.3
    申请日: 1987-06-25
  • 公开(公告)号: EP0254065A3
    公开(公告)日: 1990-07-04
  • 发明人: Watanabe, Hiroshi
  • 申请人: NEC CORPORATION
  • 申请人地址: 7-1, Shiba 5-chome Minato-ku Tokyo JP
  • 专利权人: NEC CORPORATION
  • 当前专利权人: NEC CORPORATION
  • 当前专利权人地址: 7-1, Shiba 5-chome Minato-ku Tokyo JP
  • 代理机构: Glawe, Delfs, Moll & Partner
  • 优先权: JP150353/86 19860625
  • 主分类号: G11C7/00
  • IPC分类号: G11C7/00
Address multiplex type semi-conductor memory
摘要:
A memory device of address multiplex type which can outputs read data in sequence at a high speed is disclosed. The memory device is featured by an output circuit which maintains a read output generated under both active states of a row address strobe signal and a column address strobe signal, when one of the row and column address strobe signals is still active thereby to enlarge an effective width of the read output.
公开/授权文献
信息查询
0/0