发明公开
- 专利标题: Address multiplex type semi-conductor memory
- 专利标题(中): 地址多类型半导体存储器
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申请号: EP87109120.3申请日: 1987-06-25
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公开(公告)号: EP0254065A3公开(公告)日: 1990-07-04
- 发明人: Watanabe, Hiroshi
- 申请人: NEC CORPORATION
- 申请人地址: 7-1, Shiba 5-chome Minato-ku Tokyo JP
- 专利权人: NEC CORPORATION
- 当前专利权人: NEC CORPORATION
- 当前专利权人地址: 7-1, Shiba 5-chome Minato-ku Tokyo JP
- 代理机构: Glawe, Delfs, Moll & Partner
- 优先权: JP150353/86 19860625
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
A memory device of address multiplex type which can outputs read data in sequence at a high speed is disclosed. The memory device is featured by an output circuit which maintains a read output generated under both active states of a row address strobe signal and a column address strobe signal, when one of the row and column address strobe signals is still active thereby to enlarge an effective width of the read output.
公开/授权文献
- EP0254065A2 Address multiplex type semi-conductor memory 公开/授权日:1988-01-27
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