发明公开
- 专利标题: Electron beam memory system
- 专利标题(中): 电子束存储系统
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申请号: EP87109809.1申请日: 1987-07-07
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公开(公告)号: EP0254124A3公开(公告)日: 1990-12-12
- 发明人: Ikeda, Tadashi , Shigematsu, Kazuo , Miyauchi, Yasushi , Terao, Motoyasu , Nishida, Tetsuya , Horigome, Shinkichi , Ohta, Norio , Suzuki, Ryo
- 申请人: HITACHI, LTD.
- 申请人地址: 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 当前专利权人地址: 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 代理机构: Strehl Schübel-Hopf Groening & Partner
- 优先权: JP161838/86 19860711
- 主分类号: G11B9/10
- IPC分类号: G11B9/10
摘要:
System in which a phase transition type recording film (2) is used as an information recording medium, and for recording information, a focused electron beam is selectively projected on desired positions of the recording film so as to locally heat the recording film and cause phase transition, while for retrieving information, an electron beam having energy at a degree not causing the phase transition is projected so as to utilize the fact that reflection or diffraction (7) of the primary electron beam (6) projected at the retrieval differs between the recorded regions (22a, 22b) and unrecorded regions (21a, 21b, 21c).
公开/授权文献
- EP0254124A2 Electron beam memory system 公开/授权日:1988-01-27
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