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    Electron beam memory system
    2.
    发明公开
    Electron beam memory system 失效
    Elektronenstrahl-Speichersystem。

    公开(公告)号：EP0254124A2

    公开(公告)日：1988-01-27

    申请号：EP87109809.1

    申请日：1987-07-07

    申请人： HITACHI, LTD.

    发明人： Ikeda, Tadashi ,  Shigematsu, Kazuo ,  Miyauchi, Yasushi ,  Terao, Motoyasu ,  Nishida, Tetsuya ,  Horigome, Shinkichi ,  Ohta, Norio ,  Suzuki, Ryo

    IPC分类号： G11B9/10

    CPC分类号： G11B9/10

    摘要： System in which a phase transition type recording film (2) is used as an information recording medium, and for recording information, a focused electron beam is selectively projected on desired positions of the recording film so as to locally heat the recording film and cause phase transition, while for retrieving information, an electron beam having energy at a degree not causing the phase transition is projected so as to utilize the fact that reflection or diffraction (7) of the primary electron beam (6) projected at the retrieval differs between the recorded regions (22a, 22b) and unrecorded regions (21a, 21b, 21c).

    摘要翻译： 其中使用相变型记录膜（2）作为信息记录介质并且用于记录信息的系统，聚焦的电子束被选择性地投影到记录膜的期望位置上，以局部地加热记录膜并引起相位 转移，而为了检索信息，投射具有不引起相变的程度的能量的电子束，以利用这样的事实，即在恢复时投射的一次电子束（6）的反射或衍射（7）在 记录区域（22a，22b）和未记录区域（21a，21b，21c）。

    Bloch line memory device
    4.
    发明公开
    Bloch line memory device 失效
    布洛赫线存储设备

    公开(公告)号：EP0263530A3

    公开(公告)日：1989-11-02

    申请号：EP87114799.7

    申请日：1987-10-09

    申请人： HITACHI, LTD.

    发明人： Maruyama, Youzi Hitachi Koyasudai ,  Ikeda, Tadashi ,  Suzuki, Ryo

    IPC分类号： G11C19/08

    CPC分类号： G11C19/0841 ,  G11C19/08

    摘要： A Bloch line memory device comprises stripe magnetic domains (2) in a magnetic film (6) for holding magnetic bubble domains. A pair of Bloch lines is stored as an information carrier in a magnetic wall (1) constructing the stripe magnetic domain. A longitudinal direction (21) of the stripe magnetic domain is made parallel to either the crystalographic directions [11 2 ] and [ 11 2], [1 2 1 ] and [ 1 2 1 ], or [ 2 11] and [2 11 ] of the magnetic film so that the pair of Bloch lines can be smoothly moved in the magnetic wall of the stripe magnetic domain.

    摘要翻译： 布洛赫线存储器件包括用于保持磁泡区域的磁膜（6）中的条纹磁畴（2）。 一对布洛赫线作为信息载体存储在构成条纹磁畴的磁壁（1）中。 条纹磁畴的纵向方向（21）平行于晶体学方向[11 2]和[112]，[1 2 1]和[1 2 1]或[211]和[211] 使得该对布洛赫线可以平滑地在条形磁畴的磁壁中移动。

    Bloch line memory device and method for operating same
    5.
    发明公开
    Bloch line memory device and method for operating same 失效
    布洛赫线存储器装置及其操作方法

    公开(公告)号：EP0240135A3

    公开(公告)日：1989-11-02

    申请号：EP87301591.1

    申请日：1987-02-24

    申请人： HITACHI, LTD.

    发明人： Maruyama, Youji Hitachi Koyasudai Apartment E-201 ,  Suzuki, Ryo

    IPC分类号： G11C19/08

    CPC分类号： G11C19/0883 ,  G11C19/0858 ,  G11C19/0866

    摘要： There are disclosed techniques concerning read­ing out Bloch lines in a Bloch line memory device, where pairs of Bloch lines (4) are used as information carrier. The pairs of Bloch lines (4) are transferred to the head portion of a stripe magnetic domain (2) and an in-plane magnetic field (H c ) is applied at the proximity of the head portion of the stripe magnetic domain so that the pairs of Bloch lines are splitted. In this way only one of the Bloch lines (4-l or 4-2) can exist stably at the head portion of the stripe magnetic domain. Then the Bloch lines (4-l or 4-2) are transformed into a magnetic bubble domain (8) by making electric current to flow through a hair pin shaped conductor (7) disposed at the proximity of the head portion of the stripe magnetic domain (2). This magnetic bubble domain is detected by a magnetic bubble detector.

    摘要翻译： 公开了涉及在布洛赫线存储器装置中读出布洛赫线的技术，其中布洛赫线对（4）被用作信息载体。 将成对的布洛赫线（4）转移到条形磁畴（2）的头部，并且在条形磁畴的头部附近施加平面内磁场（Hc），使得成对 布洛赫线被分割。 以这种方式，布洛赫线（4-1或4-2）中的仅一个可以稳定地存在于条带磁区的头部。 然后，通过使电流流过设置在条形磁头的头部附近的发针形导体（7），将布洛赫线（4-1或4-2）转变成磁泡区域（8） 域（2）。 这个磁泡区域被磁泡检测器检测到。

    Electron beam memory system
    10.
    发明公开
    Electron beam memory system 失效
    电子束存储系统

    公开(公告)号：EP0254124A3

    公开(公告)日：1990-12-12

    申请号：EP87109809.1

    申请日：1987-07-07

    申请人： HITACHI, LTD.

    发明人： Ikeda, Tadashi ,  Shigematsu, Kazuo ,  Miyauchi, Yasushi ,  Terao, Motoyasu ,  Nishida, Tetsuya ,  Horigome, Shinkichi ,  Ohta, Norio ,  Suzuki, Ryo

    IPC分类号： G11B9/10

    CPC分类号： G11B9/10

    摘要： System in which a phase transition type recording film (2) is used as an information recording medium, and for recording information, a focused electron beam is selectively projected on desired positions of the recording film so as to locally heat the recording film and cause phase transition, while for retrieving information, an electron beam having energy at a degree not causing the phase transition is projected so as to utilize the fact that reflection or diffraction (7) of the primary electron beam (6) projected at the retrieval differs between the recorded regions (22a, 22b) and unrecorded regions (21a, 21b, 21c).