发明公开
EP0265658A2 High energy laser mask and method of making same
失效
Hochleistungslasermaske und Herstellungsverfahren。
- 专利标题： High energy laser mask and method of making same
- 专利标题（中）： Hochleistungslasermaske und Herstellungsverfahren。
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申请号： EP87113673.5申请日： 1987-09-18
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公开(公告)号： EP0265658A2公开(公告)日： 1988-05-04
- 发明人: Kirch, Steven James , Lankard, John Robert , Ritsko, John Hames , Smith, Kurt Alan , Speidell, James Louis , Yeh, James Tien-Cheng
- 申请人： International Business Machines Corporation
- 申请人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构： Klein, Daniel Jacques Henri
- 优先权： US924480 19861029
- 主分类号： G03F1/00
- IPC分类号： G03F1/00
摘要：
The present invention is a mask and methods for making masks for use with a laser projection etching system. The unique mask is able to withstand the fluences of the high energy and high power lasers used without degrading. Specifically, the new projection etching masks are fabricated of patterned multiple dielectric layers having alternating high and low indices of refraction on a UV grade synthetic fused silica substrate in order to achieve maximum reflectivity of the laser energy in the opaque areas and maximum transmissivity of the laser energy in the transparent area of the mask.
公开/授权文献
- EP0265658B1 High energy laser mask and method of making same 公开/授权日：1993-04-07
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