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10 条记录 (耗时 0.012 秒)

    Etching apparatus for polymer film patterning
    1.
    发明公开
    Etching apparatus for polymer film patterning 失效
    用于聚合物薄膜图案的蚀刻装置

    公开(公告)号：EP0128242A3

    公开(公告)日：1987-05-06

    申请号：EP83111765

    申请日：1983-11-24

    申请人： International Business Machines Corporation

    发明人： Yeh, James Tien-Cheng

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32082 ,  G03F7/36 ,  H01J37/32559 ,  H01J2237/334 ,  Y10S156/914

    摘要： The apparatus employs a technique for protectively coating (14, 16) the electrodes (13,15) in a plasma chamber (17, 18) so as to minimize the effect of backscattering of electrode material. The potentials present in a plasma chamber when etching polymer films are such that electrode sputtering may occur. If the material of the electrode (13) where the sample is mounted (RIE mode) or the material of the counterelectrode (15) (plasma etch mode) of the chamber is not etchable in the etchant present, electrode material can be sputtered off, backscattered on the polymer surface, and cause partial masking and thus incomplete etching. Coating the electrodes with the same polymer, or with a photoresist or different polymer of corresponding etch rate, precludes such incomplete etching; the etched hole is very clean, without spikes. The coating on the electrodes may be very thick so as not to require frequent recoating.

    Method for polymer film patterning in a plasma etching apparatus.
    3.
    发明公开
    Method for polymer film patterning in a plasma etching apparatus. 失效
    Verfahren zur Erzeugung von Strukturen in Polymerfilmen in einerPlasmaätzeinrichtung。

    公开(公告)号：EP0128242A2

    公开(公告)日：1984-12-19

    申请号：EP83111765.0

    申请日：1983-11-24

    申请人： International Business Machines Corporation

    发明人： Yeh, James Tien-Cheng

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32082 ,  G03F7/36 ,  H01J37/32559 ,  H01J2237/334 ,  Y10S156/914

    摘要： The apparatus employs a technique for protectively coating (14, 16) the electrodes (13,15) in a plasma chamber (17, 18) so as to minimize the effect of backscattering of electrode material.
    The potentials present in a plasma chamber when etching polymer films are such that electrode sputtering may occur. If the material of the electrode (13) where the sample is mounted (RIE mode) or the material of the counterelectrode (15) (plasma etch mode) of the chamber is not etchable in the etchant present, electrode material can be sputtered off, backscattered on the polymer surface, and cause partial masking and thus incomplete etching.
    Coating the electrodes with the same polymer, or with a photoresist or different polymer of corresponding etch rate, precludes such incomplete etching; the etched hole is very clean, without spikes. The coating on the electrodes may be very thick so as not to require frequent recoating.

    摘要翻译： 该装置采用在等离子体室（17,18）中保护性地涂覆（14,16）电极（13,15）的技术，以便最小化电极材料的后向散射的影响。 当蚀刻聚合物膜时，存在于等离子体室中的电位使得可能发生电极溅射。 如果存在样品的电极（13）的材料（RIE模式）或室的反电极（15）的材料（等离子体蚀刻模式）在蚀刻剂中不可蚀刻，则可以溅射电极材料， 反向散射在聚合物表面上，并导致部分掩蔽，从而导致不完全蚀刻。 用相同的聚合物或具有相应蚀刻速率的光致抗蚀剂或不同聚合物涂覆电极排除了这种不完全蚀刻; 蚀刻孔很干净，没有尖峰。 电极上的涂层可能非常厚，以免不需要频繁的重涂。

    Vapor drain system
    7.
    发明公开
    Vapor drain system 失效
    蒸汽排水系统

    公开(公告)号：EP0617573A1

    公开(公告)日：1994-09-28

    申请号：EP94102707.0

    申请日：1994-02-23

    申请人： International Business Machines Corporation

    发明人： Baseman, Robert Jeffrey ,  Brown, Charles Allan ,  Eldridge, Benjamin Niles ,  Rothman, Laura Beth ,  Wendt, Herman Russel ,  Yeh, James Tien-Cheng ,  Zingher, Arthur R.

    IPC分类号： H05K13/00 ,  B65G1/00

    CPC分类号： H01L21/67366 ,  B65G1/00 ,  H01L21/67393

    摘要： During wafer fabrication, a transportable enclosure, such as a Standard Manufacturing InterFace (SMIF) pod encloses a nascent product, such as a semiconductor wafer, to protect the wafer against contamination during manufacture, storage or transportation. However chemical vapors emitted inside the pod can accumulate in the air and degrade wafers during subsequent fabrication. In order to absorb the vapors inside a closed pod, a vapor removal element typically including an activated carbon absorber, covered by a particulate-filtering vapor-permeable barrier, and covered by a guard plate with holes is disposed within the enclosure. A vapor removal element is disposed closely adjacent to each respective wafer. Alternatively, a single vapor removal element is located inside the enclosure. In certain instances, a fan or thermo-buoyant circulation causes any vapors located inside the enclosure to a vapor removal element for removal. Alternatively a porous vapor removal element may be disposed for removing vapors from air entering the enclosure. In another embodiment a vapor removal element is integrated with the back face of each wafer.

    摘要翻译： 在晶圆制造期间，诸如标准制造接口（SMIF）晶圆盒的可移动外壳封闭诸如半导体晶圆的新生产品，以保护晶圆在制造，储存或运输期间免受污染。 然而，在晶圆盒内发射的化学蒸汽会积聚在空气中，并在随后的制造过程中使晶圆降解。 为了吸收封闭容器内的蒸气，通常包括活性碳吸收剂的蒸气去除元件被覆盖有颗粒过滤蒸气可渗透屏障并且被具有孔的护板覆盖，该蒸汽去除元件被设置在外壳内。 蒸汽去除元件紧靠每个相应的晶片设置。 或者，单个蒸汽去除元件位于外壳内部。 在某些情况下，风扇或热浮力循环会使位于外壳内部的任何蒸气去除蒸汽去除元件。 或者，可设置多孔蒸气去除元件以从进入封闭空间的空气中去除蒸气。 在另一个实施例中，蒸汽去除元件与每个晶片的背面集成。

    High energy laser mask and method of making same
    10.
    发明公开
    High energy laser mask and method of making same 失效
    Hochleistungslasermaske und Herstellungsverfahren。

    公开(公告)号：EP0265658A2

    公开(公告)日：1988-05-04

    申请号：EP87113673.5

    申请日：1987-09-18

    申请人： International Business Machines Corporation

    发明人： Kirch, Steven James ,  Lankard, John Robert ,  Ritsko, John Hames ,  Smith, Kurt Alan ,  Speidell, James Louis ,  Yeh, James Tien-Cheng

    IPC分类号： G03F1/00

    CPC分类号： G03F1/58 ,  G03F1/24

    摘要： The present invention is a mask and methods for making masks for use with a laser projection etching system. The unique mask is able to withstand the fluences of the high energy and high power lasers used without degrading. Specifically, the new projection etching masks are fabricated of patterned multiple dielectric layers having alternating high and low indices of refraction on a UV grade synthetic fused silica substrate in order to achieve maximum reflectivity of the laser energy in the opaque areas and maximum transmissivity of the laser energy in the transparent area of the mask.

    摘要翻译： 本发明是用于制造用于激光投影蚀刻系统的掩模的掩模和方法。 独特的面具能够承受所使用的高能量和高功率激光器的光通量，而不会降级。 具体来说，新的投影蚀刻掩模由在UV级合成熔融石英基底上具有交替的高折射率和低折射率的图案化多个电介质层制成，以便实现不透明区域中的激光能量的最大反射率和激光器的最大透射率 能量在面具的透明区域。