A process for the production of semiconductor devices which comprises washing a cleaned semiconductor substrate (1) with or without one or more component parts formed thereon, with pure water (4), freezing pure water containing the washed substrate, preserving and/or transporting the ice(14)-covered substrate, and thawing and drying the substrate (7) before a subsequent process. The production process of the present invention can remove contamination on a surface of the semiconductor substrate in a wafer process and can inhibit the formation of a natural oxide coating on a surface of the substrate, thus shortening and simplifying the wafer process, increasing the quality and yield of the semiconductor devices, and enabling the cleaned substrate to be preserved for a long period and transported to distant areas or far countries.