公开(公告)号：EP0273628B1

公开(公告)日：1992-03-18

申请号：EP87310963.1

申请日：1987-12-14

申请人： FUJITSU LIMITED

发明人： Kobayashi, Masanori

IPC分类号： H01L21/306 ,  B65B55/22

CPC分类号： H01L21/02043 ,  B08B7/0092 ,  B65B55/22 ,  H01L21/02063 ,  H01L21/67057 ,  H01L21/677 ,  Y10S438/974

公开(公告)号：EP0398806A2

公开(公告)日：1990-11-22

申请号：EP90401309.1

申请日：1990-05-16

申请人： FUJITSU LIMITED ,  FUJITSU VLSI LIMITED

发明人： Uno, Masaaki ,  Kobayashi, Masanori ,  Nakashima, Kazushi

IPC分类号： H01L21/00

CPC分类号： H01L21/67396 ,  Y10S148/017 ,  Y10S438/974

摘要： A method of fabricating a semiconductor device comprises steps of accommodating a substrate (4) on which the semiconductor device is to be fabricated in a container (1) of an electrically insulating material, forming a film of a volatile organic solvent such that the film covers substantially an entire surface of the container and the substrate accommodated therein, said step of forming the film being performed while maintaining a connection between the film of the volatile organic solvent covering the surface of the container and the ground, so that electric charges are eliminated from the substrate and the container by flowing to the ground, and removing the film of the volatile organic solvent by evaporating the solvent.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：将其上将制造半导体器件的衬底（4）容纳在电绝缘材料的容器（1）中;形成挥发性有机溶剂膜，使得膜覆盖 基本上整个容器的表面和容纳在其中的基片，所述形成膜的步骤是在保持覆盖容器表面的挥发性有机溶剂膜与地面之间的连接的情况下进行的，从而消除电荷 通过流入地面将基材和容器蒸发，并通过蒸发溶剂除去挥发性有机溶剂膜。

公开(公告)号：EP0398806B1

公开(公告)日：1995-03-22

申请号：EP90401309.1

申请日：1990-05-16

申请人： FUJITSU LIMITED ,  FUJITSU VLSI LIMITED

发明人： Uno, Masaaki ,  Kobayashi, Masanori ,  Nakashima, Kazushi

IPC分类号： H01L21/00

CPC分类号： H01L21/67396 ,  Y10S148/017 ,  Y10S438/974

公开(公告)号：EP0398806A3

公开(公告)日：1991-09-04

申请号：EP90401309.1

申请日：1990-05-16

申请人： FUJITSU LIMITED ,  FUJITSU VLSI LIMITED

发明人： Uno, Masaaki ,  Kobayashi, Masanori ,  Nakashima, Kazushi

IPC分类号： H01L21/00

CPC分类号： H01L21/67396 ,  Y10S148/017 ,  Y10S438/974

摘要： A method of fabricating a semiconductor device comprises steps of accommodating a substrate (4) on which the semiconductor device is to be fabricated in a container (1) of an electrically insulating material, forming a film of a volatile organic solvent such that the film covers substantially an entire surface of the container and the substrate accommodated therein, said step of forming the film being performed while maintaining a connection between the film of the volatile organic solvent covering the surface of the container and the ground, so that electric charges are eliminated from the substrate and the container by flowing to the ground, and removing the film of the volatile organic solvent by evaporating the solvent.

公开(公告)号：EP0273628A1

公开(公告)日：1988-07-06

申请号：EP87310963.1

申请日：1987-12-14

申请人： FUJITSU LIMITED

发明人： Kobayashi, Masanori

IPC分类号： H01L21/306 ,  B65B55/22

CPC分类号： H01L21/02043 ,  B08B7/0092 ,  B65B55/22 ,  H01L21/02063 ,  H01L21/67057 ,  H01L21/677 ,  Y10S438/974

摘要： A process for the production of semiconductor devices which comprises washing a cleaned semiconductor substrate (1) with or without one or more component parts formed thereon, with pure water (4), freezing pure water containing the washed substrate, preserving and/or transporting the ice(14)-covered substrate, and thawing and drying the substrate (7) before a subsequent process. The production process of the present invention can remove contamination on a surface of the semiconductor substrate in a wafer process and can inhibit the formation of a natural oxide coating on a surface of the substrate, thus shortening and simplifying the wafer process, increasing the quality and yield of the semiconductor devices, and enabling the cleaned substrate to be preserved for a long period and transported to distant areas or far countries.

摘要翻译： 一种用于生产半导体器件的方法，包括用纯水（4）清洗具有或不具有一种或多种组分的清洁的半导体衬底（1），冷冻含有洗涤过的衬底的纯水，保存和/或传输 冰（14）覆盖的基底，并且在随后的过程之前解冻和干燥基底（7）。 本发明的制造方法能够消除晶片工序中的半导体衬底的表面的污染，能够抑制衬底表面的自然氧化物涂层的形成，从而缩短并简化晶片工艺，提高质量， 半导体器件的产量，以及使得清洁的基底能够长时间保存并且被输送到远距离的区域或远的国家。