发明公开
- 专利标题： Processing apparatus and method
- 专利标题（中）： 处理装置和方法
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申请号： EP88110013.5申请日： 1988-06-23
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公开(公告)号： EP0303030A1公开(公告)日： 1989-02-15
- 发明人: Davis, Cecil J. , Jucha, Rhett B. , Hildenbrand, Randall C. , Schultz, Richard E. , Loewenstein, Lee M. , Matthews, Robert T. , Huffman, Craig , Jones, John I.
- 申请人： TEXAS INSTRUMENTS INCORPORATED
- 申请人地址： 13500 North Central Expressway Dallas Texas 75265 US
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： 13500 North Central Expressway Dallas Texas 75265 US
- 代理机构： Leiser, Gottfried, Dipl.-Ing.
- 优先权： US74377 19870716
- 主分类号： C23C16/50
- IPC分类号： C23C16/50 ; C23C16/54
摘要：
A processing apparatus (1300) and method wherein an integrated circuit wafer (48) is exposed to activated species generated by a first plasma (1326) which is separate from the wafer (48), but is in the process gas flow stream (1322) upstream of the wafer, and is also exposed to ion bombardment generated by a second plasma which has a dark space which substantially adjoins the surface (54) of the wafer (48). It is useful to keep the in situ plasma at a relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the ion bombardment energy.
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