发明公开
EP0308588A1 Semiconductor-on-insulator fabrication method
失效
Verfahren zur Herstellung eines Halbleiters auf einem Isolator。
- 专利标题： Semiconductor-on-insulator fabrication method
- 专利标题（中）： Verfahren zur Herstellung eines Halbleiters auf einem Isolator。
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申请号： EP88109806.5申请日： 1985-07-08
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公开(公告)号： EP0308588A1公开(公告)日： 1989-03-29
- 发明人: Ng, K.K. , Sze, Simon Min
- 申请人： AT&T Corp.
- 申请人地址： 32 Avenue of the Americas New York, NY 10013-2412 US
- 专利权人： AT&T Corp.
- 当前专利权人： AT&T Corp.
- 当前专利权人地址： 32 Avenue of the Americas New York, NY 10013-2412 US
- 代理机构： Watts, Christopher Malcolm Kelway, Dr.
- 优先权： US636730 19840801
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/84
摘要：
This method involves the formation of a precursor substrate surface which includes islands (40) of insulating material, each of which is encircled by a crystallization seeding area (170) of substantially single crystal semiconductor material. The boundaries of the islands are defined with a first pattern delineating device, e.g., a mask, which, in terms of the pattern it produces, is substantially identical to a second pattern delineating device. The latter device is a component of pattern delineating apparatus used in forming an IC, e.g., an IC mask set, the component being used to delineate the device regions of the IC. A layer of non-single crystal semiconductor material (45) is formed on the precursor substrate surface (30), and crystallized with little or no displacement of the islands. The pattern delineating apparatus is then used to form an IC in the crystallized material.
公开/授权文献
- EP0308588B1 Semiconductor-on-insulator fabrication method 公开/授权日：1991-04-03
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