发明公开
- 专利标题： Complementary bipolar semiconductor device
- 专利标题（中）： 补充双极半导体器件
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申请号： EP89101952.3申请日： 1989-02-03
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公开(公告)号： EP0327122A3公开(公告)日： 1992-09-02
- 发明人: Tanoue, Tomonori , Kusano, Chushirou Sankopo Higashitokorozawa 304 , Takahashi, Susumu
- 申请人： HITACHI, LTD.
- 申请人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 专利权人： HITACHI, LTD.
- 当前专利权人： HITACHI, LTD.
- 当前专利权人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 代理机构： Strehl Schübel-Hopf Groening & Partner
- 优先权： JP21955/88 19880203
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L27/082
摘要：
A complementary semiconductor device is disclosed which comprises a substrate (1) and four layer structure (2 ... 6) of pnpn provided on the substrate wherein the first three layers (2, 3, 5) constitute a pnp-type bipolar transistor and the second to fourth layers (3, 5, 6) constitute an npn-type bipolar transistor. According to the present invention, the pnp- and npn-type transistors can be produced by crystal growth of one time and thus production steps are simple and yield is remarkably improved.
公开/授权文献
- EP0327122B1 Complementary bipolar semiconductor device 公开/授权日：1996-08-28
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