发明公开
EP0335720A2 Bipolar transistor device and method of manufacturing the same
失效
Bipolartransistor和Verfahren zu seiner Herstellung。
- 专利标题: Bipolar transistor device and method of manufacturing the same
- 专利标题(中): Bipolartransistor和Verfahren zu seiner Herstellung。
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申请号: EP89303158.3申请日: 1989-03-30
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公开(公告)号: EP0335720A2公开(公告)日: 1989-10-04
- 发明人: Morizuka, Kouhei c/o Patent Division K.K.Toshiba
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 代理机构: Freed, Arthur Woolf
- 优先权: JP74443/88 19880330
- 主分类号: H01L29/72
- IPC分类号: H01L29/72 ; H01L29/08 ; H01L29/10
摘要:
A bipolar transistor device according to the present invention comprises a collector region (112, 116) of a first conductivity type formed on a semiconductor substrate (110), a base region (118) of a second conductivity type formed on the collector region, a mesa type emitter region (120, 122, 124) of the first conductivity type formed on the base region, a base electrode (138) formed on the base region and separated from a bottom portion of the mesa type emitter region, a resin layer (146) formed on the base electrode and covering a side face of the emitter region and the base region exposed between the base electrode and the bottom portion of the emitter region, and an emitter electrode (136) overlapping at its end portion with the base electrode with the resin layer being interposed.
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