发明公开
EP0350058A2 Method of manufacturing green light emitting diode
失效
Herstellungsverfahren einergrünesLicht emittierenden Diode。
- 专利标题： Method of manufacturing green light emitting diode
- 专利标题（中）： Herstellungsverfahren einergrünesLicht emittierenden Diode。
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申请号： EP89112469.5申请日： 1989-07-07
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公开(公告)号： EP0350058A2公开(公告)日： 1990-01-10
- 发明人: Watanabe, Masayuki Intellectual Property Division , Nakajima, Masahiro Intellectual Property Division
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 代理机构： Lehn, Werner, Dipl.-Ing.
- 优先权： JP170253/88 19880708
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
In a method of manufacturing a green light emitting diode, an included angle (ϑ] defined by a line extending along the longitudinal direction of light and dark stripes of an oxide region (7) formed on a cleavage surface (6) of a GaP single crystal wafer (1) and a (111) surface of the wafer (1) is set to be a predetermined angle, and a liquid phase epitaxial layer having a p-n junction is formed on the (111) surface (8) of the GaP single crystal wafer (1).
公开/授权文献
- EP0350058B1 Method of manufacturing green light emitting diode 公开/授权日：1994-11-30
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