公开(公告)号：EP0350058B1

公开(公告)日：1994-11-30

申请号：EP89112469.5

申请日：1989-07-07

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Watanabe, Masayuki Intellectual Property Division ,  Nakajima, Masahiro Intellectual Property Division

IPC分类号： H01L33/00

CPC分类号： H01L33/30 ,  H01L33/0062 ,  H01L33/16 ,  Y10S148/066 ,  Y10S438/973

公开(公告)号：EP0350058A2

公开(公告)日：1990-01-10

申请号：EP89112469.5

申请日：1989-07-07

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Watanabe, Masayuki Intellectual Property Division ,  Nakajima, Masahiro Intellectual Property Division

IPC分类号： H01L33/00

CPC分类号： H01L33/30 ,  H01L33/0062 ,  H01L33/16 ,  Y10S148/066 ,  Y10S438/973

摘要： In a method of manufacturing a green light emitting diode, an included angle (ϑ] defined by a line extending along the longitudinal direction of light and dark stripes of an oxide region (7) formed on a cleavage surface (6) of a GaP single crystal wafer (1) and a (111) surface of the wafer (1) is set to be a predetermined angle, and a liquid phase epitaxial layer having a p-n junction is formed on the (111) surface (8) of the GaP single crystal wafer (1).

摘要翻译： 在制造绿色发光二极管的方法中，由形成在GaP单元的解理面（6）上的氧化物区域（7）的沿着光和深条纹的纵向方向延伸的线限定的夹角（θ） 将晶片（1）的晶体晶片（1）和（111）表面设定为预定角度，并且在GaP单晶的（111）表面（8）上形成具有pn结的液相外延层 晶体晶片（1）。

公开(公告)号：EP0350058A3

公开(公告)日：1990-05-30

申请号：EP89112469.5

申请日：1989-07-07

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Watanabe, Masayuki Intellectual Property Division ,  Nakajima, Masahiro Intellectual Property Division

IPC分类号： H01L33/00

CPC分类号： H01L33/30 ,  H01L33/0062 ,  H01L33/16 ,  Y10S148/066 ,  Y10S438/973

摘要： In a method of manufacturing a green light emitting diode, an included angle (ϑ] defined by a line extending along the longitudinal direction of light and dark stripes of an oxide region (7) formed on a cleavage surface (6) of a GaP single crystal wafer (1) and a (111) surface of the wafer (1) is set to be a predetermined angle, and a liquid phase epitaxial layer having a p-n junction is formed on the (111) surface (8) of the GaP single crystal wafer (1).