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EP0367293A2 Semiconductor device with a self-aligned base, and method of manufacturing the same
失效
Halbleiteranordnung mit selbstausgerichteter Basis und Verfahren zur Herstellung。
- 专利标题： Semiconductor device with a self-aligned base, and method of manufacturing the same
- 专利标题（中）： Halbleiteranordnung mit selbstausgerichteter Basis und Verfahren zur Herstellung。
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申请号： EP89120501.5申请日： 1989-11-06
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公开(公告)号： EP0367293A2公开(公告)日： 1990-05-09
- 发明人: Kanda, Akihiro , Fujita, Yoshiro , Hirai, Takehiro , Tanaka, Mitsuo , Esaki, Hideya
- 申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 申请人地址： 1006, Oaza Kadoma Kadoma-shi, Osaka-fu, 571 JP
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： 1006, Oaza Kadoma Kadoma-shi, Osaka-fu, 571 JP
- 代理机构： Tiedtke, Harro, Dipl.-Ing.
- 优先权： JP278700/88 19881104
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/331
摘要：
A bipolar semiconductor device and a method of manufacturing the same are disclosed, in which emitter, base and collector contacts are formed as self-aligned contacts. It is thus possible to realize a high speed, high density semiconductor device, which greatly reduces the element area, emitter-base, base-collector and collector-substrate capacitances and base and collector resistances.
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