A semiconductor laser device is disclosed which comprises a semiconductor substrate (1) having a ridge portion (9), the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer (2) formed on the substrate (1) including the ridge portion (9); at least one striped groove (11) formed on the center of the ridge portion (9) through the current blocking layer (2); and a multi-layered structure disposed on the current blocking layer (2), the multi-layered structure succes­sively having a first cladding layer (3), an active layer (4) for laser oscillation, and a second cladding layer (5); wherein at least two side grooves (10) are symmetrically formed on both sides of the center region of the ridge portion (9) with the same width as that of the regions thereof near the facets. Also, disclosed is a method for producing the semiconductor laser device.