摘要:
A surface electrode (316) on a surface (330) of a LED has a pad (318), and further, at least first-order branches (319a, ..., 319d) linearly extending from the pad (318), second-order branches (320a, 320b, and 320c) diverged and linearly extending from the first-order branches (319a, ..., 319d), and third-order branches (322a, 322b, and 322c) diverged and linearly extending from the second-order branches (320a, 320b, and 320c). The pad (318) out of the surface electrode (316) is not in electrical contact with a underlying semiconductor layer (331), whereas the surface electrode (316) and the semiconductor layer (331) are in electrical contact with each other at ends of the highest-order branches (322a, 322b, and 322c). Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode (316) is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.
摘要:
A method for producing a semiconductor laser device includes the steps of: forming semiconductor window layers on either one of a top surface of an internal structure or a reverse surface of a substrate (10) and on light-emitting end facets (30A,30B) of the internal structure; forming a reflection film (34) on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming semiconductor window layers on light-emitting end facets of the bars (2); inserting the bars (2) into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars (2) and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars (2); and cutting the bars (2) into the chips.
摘要:
A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel (10) formed in a semiconductor substrate (1) through a current blocking layer (2) on the substrate (1) and at least two dummy grooves (20) formed in the current blocking layer (2) on each side of the striped channel (10). Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate (1), the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions by an angle ϑ satisfying the relationship 0.1o
摘要:
A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel (10) formed in a semiconductor substrate (1) through a current blocking layer (2) on the substrate (1) and at least two dummy grooves (20) formed in the current blocking layer (2) on each side of the striped channel (10). Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate (1), the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions by an angle ϑ satisfying the relationship 0.1o
摘要:
A semiconductor laser array device comprises a plurality of index-guided lasing filaments (9) formed in an active layer (3) in a parallel manner, and an electrical current injection portion (17) formed on the upper face of grown layers, the profile of said electrical current injection portion being asymmetrical with respect to any line (110) which is parallel to the lasing filaments (9). The laser light obtained is limited to a single direction (103') since the laser array can only oscillate in one mode.
摘要:
There is provided a semiconductor laser element, which has a small capacitance outside a ridge portion and high response speed and is able to effect pulse oscillation with a satisfactory pulse waveform. On a GaAs substrate 101, there are provided an n-type buffer layer 102, an n-type first clad layer 103, an MQW active layer 104, a p-type second clad layer 105, a p-type etching stop layer 106 that has an energy bandgap smaller than that of this second clad layer 105, a p-type third clad layer 107 that constitutes a ridge portion and a p-type protective layer 108. On both sides in the widthwise direction of the ridge portion are laminated a p-type spacer layer 109, an n-type current light confining layer 110, an n-type current confining layer 111 and a p-type flattening layer 112. On these layers is laminated a p-type contact layer 113. A depletion layer spreads into the spacer layer 109 when a bias voltage is applied. Therefore, a capacitance between the spacer layer 109 and the current light confining layer 110 is reduced, and a response speed during the pulse oscillation of the semiconductor laser element becomes fast.