发明授权
- 专利标题: Fault tolerant memory systems
- 专利标题(中): 容错存储系统
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申请号: EP90102079.2申请日: 1990-02-02
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公开(公告)号: EP0386462B1公开(公告)日: 1996-05-01
- 发明人: Blake, Robert Martin , Bossen, Douglas Craig , Chen, Chin-Long , Fifield, John Atkinson , Kalter, Howard Leo , Lo, Tin-Chee
- 申请人: International Business Machines Corporation
- 申请人地址: Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构: Schäfer, Wolfgang, Dipl.-Ing.
- 优先权: US322255 19890310
- 主分类号: G06F11/00
- IPC分类号: G06F11/00
摘要:
In a memory system comprising a plurality of memory units (10) each of which possesses unit-level error correction capabilities (20) and each of which are tied to a system level error correction function (30), memory reliability is enhanced by providing means for fixing the output of one of the memory units at a fixed value in response to the occurrence of an uncorrectable error in one of the memory units. This counter-intuitive approach to the generation of forced hard errors nonetheless enhances overall memory system reliability since it enables the employment of the complement/recomplement algorithm which depends upon the presence of reproducible errors for proper operation. Thus, chip level error correction systems, which are increasingly desirable at high packaging densities, are employed in a way which does not interfere with system level error correction methods.
公开/授权文献
- EP0386462A3 Fault tolerant memory systems 公开/授权日:1991-10-23
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