An integrated memory comprising a sense amplifier which has an equalizing effect on voltages on the inputs of the sense amplifier, the sense amplifier comprising a parallel connection of a first and a second current branch, each current branch including a control transistor whose source is connected to a relevant input and whose gate is connected to the drain of the control transistor in the other current branch, a load transistor whose gate receives a selection signal being connected in said current branch in series with the control transistor.