发明公开
- 专利标题： Dielectric structures with material resistant to etching and method of fabrication thereof
- 专利标题（中）： 具有嵌入材料抗蚀刻的电介质结构及其制造方法
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申请号： EP90109857.4申请日： 1990-05-23
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公开(公告)号： EP0403817A3公开(公告)日： 1991-12-18
- 发明人: Babich, Edward D. , Hatzakis, Michael , McGouey, Richard P. , Nunes, Sharon, L. , Paraszczak, Jurij R. , Shaw, Jane M.
- 申请人： International Business Machines Corporation
- 申请人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构： Schäfer, Wolfgang, Dipl.-Ing.
- 优先权： US366089 19890613
- 主分类号： H01L21/312
- IPC分类号： H01L21/312 ; H01L23/14 ; H01L21/48
摘要：
Structures containing a dielectric material (2) having a polymeric reactive ion etch (RIE) barrier (14) embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier (14) is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallocyclobutane, metallobutene and vinyl groups. The etch barrier (14) is deposited as a solvent free liquid which can fill gaps (30) between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.
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