发明公开
EP0405979A2 Method of forming a bipolar transistor having closely spaced device regions
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Verfahren zur Herstellung eines bipola2en晶体管mit Gebieten mit engenAbständen。
- 专利标题： Method of forming a bipolar transistor having closely spaced device regions
- 专利标题（中）： Verfahren zur Herstellung eines bipola2en晶体管mit Gebieten mit engenAbständen。
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申请号： EP90307090.2申请日： 1990-06-28
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公开(公告)号： EP0405979A2公开(公告)日： 1991-01-02
- 发明人: Feist, Wolfgang M.
- 申请人： RAYTHEON COMPANY
- 申请人地址： 141 Spring Street Lexington Massachusetts 02173 US
- 专利权人： RAYTHEON COMPANY
- 当前专利权人： RAYTHEON COMPANY
- 当前专利权人地址： 141 Spring Street Lexington Massachusetts 02173 US
- 代理机构： Jackson, David Spence
- 优先权： US373306 19890629
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L21/60
摘要：
A base region (26) is implanted into an epitaxial layer (14). An emitter region (70) and a collector contact region (32) are formed of doped polysilicon on the epitaxial layer (14), the emitter region (30) being formed over the base region (26). The implant that forms the base region (26) extends below the surface of the epitaxial layer (14) in all regions not covered by the collector region (32). Low resistance silicide contacts (36,38,40,44), such as titanium or cobalt, are formed on the structure in a self-aligned fashion. The bipolar function transistor can be formed as part of BiCMOS circuitry.
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