发明公开
EP0407088A1 Amorphous semiconductor film and process for its production
失效
Amorphe Halbleiterschicht und Verfahren zu deren Herstellung。
- 专利标题： Amorphous semiconductor film and process for its production
- 专利标题（中）： Amorphe Halbleiterschicht und Verfahren zu deren Herstellung。
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申请号： EP90307023.3申请日： 1990-06-27
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公开(公告)号： EP0407088A1公开(公告)日： 1991-01-09
- 发明人: Miyachi, Kenji , Fukuda, Nobuhiro , Ashida, Yoshinori , Koyama, Masato
- 申请人： MITSUI TOATSU CHEMICALS, Inc.
- 申请人地址： 2-5 Kasumigaseki 3-chome Chiyoda-Ku Tokyo 100 JP
- 专利权人： MITSUI TOATSU CHEMICALS, Inc.
- 当前专利权人： MITSUI TOATSU CHEMICALS, Inc.
- 当前专利权人地址： 2-5 Kasumigaseki 3-chome Chiyoda-Ku Tokyo 100 JP
- 代理机构： Stuart, Ian Alexander
- 优先权： JP163710/89 19890628; JP165402/89 19890629; JP165403/89 19890629; JP199258/89 19890802; JP199259/89 19890802; JP199260/89 19890802; JP200234/89 19890803; JP11803/90 19900123
- 主分类号： H01L31/20
- IPC分类号： H01L31/20 ; C23C16/22 ; C23C14/12
摘要：
A method for forming an amorphous semiconductor film which comprises (a) a film-forming step of forming a semiconductor film having not more that 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 Å, and (b) a modifying step of modifying the formed film, the steps being repeated multiple times. The modifying step may involve exposure to discharge atmosphere contained a non-film-forming reactive gas, or to a monovalent ion, or to atomic hydrogen to improve the properties of the semiconductor film. For a halogenated silicon film, modification may involve dehalogenation-hydrogenation.
公开/授权文献
- EP0407088B1 Method of forming an amorphous semiconductor film 公开/授权日：1998-05-06
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