Method for forming semiconductor thin film
    2.
    发明公开
    Method for forming semiconductor thin film 失效
    形成半导体薄膜的方法

    公开(公告)号:EP0393985A3

    公开(公告)日:1991-02-06

    申请号:EP90304104.4

    申请日:1990-04-17

    IPC分类号: C23C16/24 C23C16/50

    CPC分类号: C23C16/517 C23C16/24

    摘要: A method for forming an amorphous semiconductor thin film on a substrate, which comprises preparing a reactor fitted with at least a high-frequency electrode for generating glow discharge, applying an A.C. voltage to the electrode, applying a D,.C. voltage to the electrode independently from the A.C. voltage, feeding a reactive gas into the reactor to generate glow discharge of the reactive gas and maintain it, and forming the semiconductor thin film on the substrate.

    Method for forming semiconductor thin film
    4.
    发明公开
    Method for forming semiconductor thin film 失效
    Methode zur Bildung einerdünnenHalbleiterschicht。

    公开(公告)号:EP0393985A2

    公开(公告)日:1990-10-24

    申请号:EP90304104.4

    申请日:1990-04-17

    IPC分类号: C23C16/24 C23C16/50

    CPC分类号: C23C16/517 C23C16/24

    摘要: A method for forming an amorphous semiconductor thin film on a substrate, which comprises preparing a reactor fitted with at least a high-frequency electrode for generating glow discharge, applying an A.C. voltage to the electrode, applying a D,.C. voltage to the electrode independently from the A.C. voltage, feeding a reactive gas into the reactor to generate glow discharge of the reactive gas and maintain it, and forming the semiconductor thin film on the substrate.

    摘要翻译: 一种在衬底上形成非晶半导体薄膜的方法,包括制备装配有至少一个用于产生辉光放电的高频电极的反应器,向电极施加交流电压,施加D,C。 独立于交流电压对电极施加电压,将反应性气体供给到反应器中以产生反应气体的辉光放电并保持其,并在衬底上形成半导体薄膜。

    Reflector
    7.
    发明公开
    Reflector 失效
    REFLEKTOR。

    公开(公告)号:EP0516489A2

    公开(公告)日:1992-12-02

    申请号:EP92305004.1

    申请日:1992-06-01

    IPC分类号: F21V7/22 F21V7/16

    摘要: A planar reflector is composed of a base (8) and a flexible substrate (5) having a high reflection layer (6) formed thereon and overlayed on the base (8) with an adhesive layer (7) interposed between the high reflection layer and the base. The adhesion strength between the base and the substrate is at least 100 g/cm, and the thickness of the adhesive layer is not smaller than 0.5 µm but not greater than 50 µm. A curved reflector can be obtained by bending the planar reflector so that a curved surface having a curvature of radius not greater than 5 mm is formed presenting a concave surface on a side of the flexible substrate.

    摘要翻译: 平面反射器由基部(8)和具有形成在其上的高反射层(6)的柔性基板(5)构成,并且在基部(8)上覆盖有粘合剂层(7),夹在高反射层和 的基地。 基材与基材之间的粘合强度为至少100g / cm,粘合剂层的厚度不小于0.5μm,但不大于50μm。 可以通过弯曲平面反射器来获得弯曲的反射器,从而形成具有半径不大于5mm的曲率的曲面,在柔性基板的一侧形成凹面。

    Forming films, e.g. of amorphous silicon
    8.
    发明公开
    Forming films, e.g. of amorphous silicon 失效
    成型膜 的非晶硅

    公开(公告)号:EP0327253A3

    公开(公告)日:1990-07-25

    申请号:EP89300731.0

    申请日:1989-01-26

    IPC分类号: H01J37/32 H01L21/205

    CPC分类号: H01J37/32431

    摘要: A film-forming apparatus comprising a high-frequency application electrode (10) and an earth electrode (20). The high-frequency applying electrode has an uneven surface with hills (50) and valleys (60). An amorphous silicon film is formed uniformly on a substrate (40) at a high speed by feeding a silicon-based gas into this apparatus and generating a glow discharge between the high-frequency application electrode (10) and the earth electrode (20), and positioning the substrate (40) in an atmosphere of the generated glow discharge.

    Transparent conductive laminate and electroluminescence element
    10.
    发明公开
    Transparent conductive laminate and electroluminescence element 失效
    透明导电叠层板和电致发光元件

    公开(公告)号:EP0781076A2

    公开(公告)日:1997-06-25

    申请号:EP96309314.1

    申请日:1996-12-19

    IPC分类号: H05B33/28

    CPC分类号: H05B33/28 Y10S428/917

    摘要: A transparent conductive laminate in which a transparent conductive layer (an ITO film) mainly comprising indium, tin and oxygen is formed on one main surface of a transparent substrate such as a polymeric film and which is excellent in moist heat resistance and scuff resistance and which can be applied to various kinds of transparent electrodes. The transparent conductive layer has a stable amorphous structure, and its resistivity is 1x10 -2 Ω·cm or less, and its electron mobility is 20 cm 2 /(V·sec) or more. This transparent conductive laminate can be prepared by forming an amorphous film mainly comprising indium, tin and oxygen and having a resistivity of more than 1x10 -2 Ω·cm on the substrate by a sputtering process under a high oxygen concentration atmosphere, and then subjecting the film to a heat treatment in the range of 80 to 180 °C to decrease the resistivity to 1x10 -2 Ω·cm or less, while the amorphous structure is maintained. This transparent conductive laminate can suitably be utilized as the transparent electrode of an electroluminescence light-emitting element equipped with a layer containing zinc sulfide as a light-emitting layer, and in this case, the deterioration of luminance during continuous light emission can be remarkably inhibited.