发明公开
EP0421446A3 Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and nonvolatile memory cell are formed in one chip
失效
半导体器件，其中N沟道MOSFET，P沟道MOSFET和非易失性存储器单元在一个芯片中形成
- 专利标题： Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and nonvolatile memory cell are formed in one chip
- 专利标题（中）： 半导体器件，其中N沟道MOSFET，P沟道MOSFET和非易失性存储器单元在一个芯片中形成
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申请号： EP90119100.7申请日： 1990-10-05
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公开(公告)号： EP0421446A3公开(公告)日： 1992-01-02
- 发明人: Uemura, Teruo, c/o Intellectual Property Div. , Hanada, Naoki, c/o Intellectual Property Div.
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 代理机构： Lehn, Werner, Dipl.-Ing.
- 优先权： JP261569/89 19891006
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L27/092
摘要：
An n-channel MOSFET (102), a p-channel MOSFET (104) and a nonvolatile memory cell (100) are provided for the same semiconductor substrate (1). The nonvolatile memory cell (100) is formed on the semiconductor substrate (1), the n-channel MOSFET (102) is formed in a p-type well region (11) of the semiconductor substrate (1), and the p-channel MOSFET (104) is formed in an n-type well region (12) of the semiconductor substrate (1).
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