发明授权
EP0421446B1 Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and nonvolatile memory cell are formed in one chip
失效
形成在一个芯片中,N沟道MOSFET,P沟道MOSFET和一个非易失性存储单元,其中的半导体器件。
- 专利标题: Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and nonvolatile memory cell are formed in one chip
- 专利标题(中): 形成在一个芯片中,N沟道MOSFET,P沟道MOSFET和一个非易失性存储单元,其中的半导体器件。
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申请号: EP90119100.7申请日: 1990-10-05
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公开(公告)号: EP0421446B1公开(公告)日: 1994-12-28
- 发明人: Uemura, Teruo, c/o Intellectual Property Div. , Hanada, Naoki, c/o Intellectual Property Div.
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 代理机构: Lehn, Werner, Dipl.-Ing.
- 优先权: JP261569/89 19891006
- 主分类号: H01L27/115
- IPC分类号: H01L27/115 ; H01L27/092
摘要:
An n-channel MOSFET (102), a p-channel MOSFET (104) and a nonvolatile memory cell (100) are provided for the same semiconductor substrate (1). The nonvolatile memory cell (100) is formed on the semiconductor substrate (1), the n-channel MOSFET (102) is formed in a p-type well region (11) of the semiconductor substrate (1), and the p-channel MOSFET (104) is formed in an n-type well region (12) of the semiconductor substrate (1).
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