发明授权
EP0421446B1 Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and nonvolatile memory cell are formed in one chip 失效
形成在一个芯片中,N沟道MOSFET,P沟道MOSFET和一个非易失性存储单元,其中的半导体器件。

Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and nonvolatile memory cell are formed in one chip
摘要:
An n-channel MOSFET (102), a p-channel MOSFET (104) and a nonvolatile memory cell (100) are provided for the same semiconductor substrate (1). The nonvolatile memory cell (100) is formed on the semiconductor substrate (1), the n-channel MOSFET (102) is formed in a p-type well region (11) of the semiconductor substrate (1), and the p-channel MOSFET (104) is formed in an n-type well region (12) of the semiconductor substrate (1).
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