发明公开
- 专利标题: Nonvolatile semiconductor memory system
- 专利标题(中): NichtflüchtigesHalbleiterspeichersystem。
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申请号: EP91100033.9申请日: 1991-01-02
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公开(公告)号: EP0438050A2公开(公告)日: 1991-07-24
- 发明人: Kondo, Hitoshi, c/o Intellectual Property Div. , Yamamoto, Tetsuya, c/o Intellectual Property Div. , Saeki, Yukihiro, c/o Intellectual Property Div.
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: 72, Horikawa-cho, Saiwai-ku Kawasaki-shi JP
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: 72, Horikawa-cho, Saiwai-ku Kawasaki-shi JP
- 代理机构: Lehn, Werner, Dipl.-Ing.
- 优先权: JP9575/90 19900119
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
An EPROM integrated circuit (20) includes a plurality of banks. When a data write operation is to be performed for this EEPROM integrated circuit (20), a bank which is used once is not used again, but the operation is constantly performed for new banks. In order to select a bank, a write number storage area (21) is provided in the EPROM integrated circuit (20), and the contents of the write number storage area (21) are updated by a write number updating circuit (29) each time the write operation is performed for a new bank.
公开/授权文献
- EP0438050B1 Nonvolatile semiconductor memory system 公开/授权日:1996-05-01
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