发明公开
- 专利标题： Method for forming a metal contact
- 专利标题（中）： 形成金属接触的方法
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申请号： EP91310146.5申请日： 1991-11-01
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公开(公告)号： EP0485130A3公开(公告)日： 1992-07-22
- 发明人: Chen, Fusen E. , Liou, Fu-Tai , Lin, Yih-Shung , Dixit, Girish A. , Wei, Che-Chia
- 申请人： SGS-THOMSON MICROELECTRONICS, INC. (a Delaware corp.)
- 申请人地址： 1310 Electronics Drive Carrollton, TX 75006 US
- 专利权人： SGS-THOMSON MICROELECTRONICS, INC. (a Delaware corp.)
- 当前专利权人： SGS-THOMSON MICROELECTRONICS, INC. (a Delaware corp.)
- 当前专利权人地址： 1310 Electronics Drive Carrollton, TX 75006 US
- 代理机构： Palmer, Roger
- 优先权： US609883 19901105
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/3205 ; H01L21/90
摘要：
A method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.
公开/授权文献
- EP0485130B1 Method for forming a metal contact 公开/授权日：2006-10-04
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