公开(公告)号：EP0485130A3

公开(公告)日：1992-07-22

申请号：EP91310146.5

申请日：1991-11-01

申请人： SGS-THOMSON MICROELECTRONICS, INC. (a Delaware corp.)

发明人： Chen, Fusen E. ,  Liou, Fu-Tai ,  Lin, Yih-Shung ,  Dixit, Girish A. ,  Wei, Che-Chia

IPC分类号： H01L21/285 ,  H01L21/3205 ,  H01L21/90

CPC分类号： H01L21/76843 ,  C23C16/0281 ,  C23C16/20 ,  H01L21/28512 ,  H01L21/32051 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.

公开(公告)号：EP0506426A1

公开(公告)日：1992-09-30

申请号：EP92302665.2

申请日：1992-03-26

申请人： SGS-THOMSON MICROELECTRONICS, INC. (a Delaware corp.)

发明人： Chen, Fusen E. ,  Liou, Fu-Tai

IPC分类号： H01L21/768 ,  H01L21/283

CPC分类号： H01L21/76847 ,  H01L21/76844 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S438/97 ,  H01L2924/00

摘要： A method for forming aluminum metallization for contacting a conductive element in an integrated circuit, and an integrated circuit formed according to the same, is disclosed. According to a first disclosed embodiment, a first aluminum alloy layer is formed within the contact, optionally with a barrier layer between it and the underlying electrode. An etch stop layer is formed thereover, of a material which has a low etch rate to an aluminum etchant species. A second, thicker, aluminum alloy layer is formed thereover. The second aluminum layer is etched until the etch stop layer is reached; the mask for defining the metal line may have an edge within the dimensions of the contact opening. After removal of the exposed etch stop layer, a timed etch removes the first aluminum alloy layer, without exposing the bottom of the contact. The metal line may thus be safely formed, without requiring an enclosure around the contact opening. According to an alternate embodiment, conductive or semiconductive sidewall spacers may be formed, upon which the metal etch can stop, leaving a metal line within the contact dimensions. A further alternative embodiment uses a conductive etch stop layer which covers the entire contact, and upon which the metal etch can stop within the contact opening.

摘要翻译： 用于在集成电路的接触的导电元件形成铝金属到相同的方法，以及集成电路FORMEDgemäß，是游离缺失盘。 。根据第一盘游离缺失实施例中，第一铝合金层在接触内形成，任选地与它和下面的电极之间的阻挡层。 蚀刻停止层被形成在那里，其具有的铝低的蚀刻速率的蚀刻剂物种的材料制成。 第二，更厚，铝合金层之上形成有。 第2铝层被蚀刻直到达到蚀刻停止层; 用于限定金属线掩模可以具有到接触开口的尺寸范围内边缘。 去除暴露的蚀刻停止层之后，定时蚀刻移除第一铝合金层，而不暴露接触的底部。 该金属线可以是安全地这样形成，而不在周围的接触开口的外壳需要。 在替代实施例中。据，导电或半导电侧壁间隔物可以形成，在其上金属蚀刻可以停止，离开接触尺寸内的金属线。 另一替代实施例使用覆盖整个接触的导电蚀刻停止层，并在其上的金属蚀刻可以接触开口内停止。

公开(公告)号：EP0506426B1

公开(公告)日：1997-07-23

申请号：EP92302665.2

申请日：1992-03-26

申请人： SGS-THOMSON MICROELECTRONICS, INC. (a Delaware corp.)

发明人： Chen, Fusen E. ,  Liou, Fu-Tai

IPC分类号： H01L21/768 ,  H01L21/283

CPC分类号： H01L21/76847 ,  H01L21/76844 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S438/97 ,  H01L2924/00

公开(公告)号：EP0485130A2

公开(公告)日：1992-05-13

申请号：EP91310146.5

申请日：1991-11-01

申请人： SGS-THOMSON MICROELECTRONICS, INC. (a Delaware corp.)

发明人： Chen, Fusen E. ,  Liou, Fu-Tai ,  Lin, Yih-Shung ,  Dixit, Girish A. ,  Wei, Che-Chia

IPC分类号： H01L21/285 ,  H01L21/3205 ,  H01L21/90

CPC分类号： H01L21/76843 ,  C23C16/0281 ,  C23C16/20 ,  H01L21/28512 ,  H01L21/32051 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.

摘要翻译： 提供一种用于沉积铝薄膜层以在半导体集成电路器件中形成改进的质量接触的方法。 所有或一些沉积过程在允许改善沉积的铝原子的表面迁移的温度下以相对低的沉积速率进行。 在这些条件下沉积的铝倾向于填充接触孔而不形成空隙。 低温沉积步骤可以通过沉积铝来开始，而包含集成电路器件的晶片正在沉积室内的较冷的温度被加热。