发明公开
EP0534627A1 Semiconductor element with determination of the switching timing
失效
Halbleiterement mit Feststellung der Schaltzeit。
- 专利标题： Semiconductor element with determination of the switching timing
- 专利标题（中）： Halbleiterement mit Feststellung der Schaltzeit。
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申请号： EP92308069.1申请日： 1992-09-04
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公开(公告)号： EP0534627A1公开(公告)日： 1993-03-31
- 发明人: Nishimura, Takeyoshi
- 申请人： FUJI ELECTRIC CO. LTD.
- 申请人地址： 1-1, Tanabeshinden, Kawasaki-ku Kawasaki 210 JP
- 专利权人： FUJI ELECTRIC CO. LTD.
- 当前专利权人： FUJI ELECTRIC CO. LTD.
- 当前专利权人地址： 1-1, Tanabeshinden, Kawasaki-ku Kawasaki 210 JP
- 代理机构： Carmichael, David Andrew Halliday
- 优先权： JP235209/91 19910917
- 主分类号： H01L27/06
- IPC分类号： H01L27/06
摘要：
The invention aims to reduce switching loss by making possible the detection of the current flowing into parasitic diodes, which is useful for adjusting the switching timing at a commutation.
When the parasitic diodes consist of a first region of a first conduction type in a semiconductor substrate, and a second region of a second conduction type formed on the surface layer of the substrate, a third region with the same conduction type, impurity concentration and depth as the second region is formed on the surface layer of the first region, while the current flowing into the parasitic diodes consisting of the first and the third regions is drawn out from the electrode making contact with the third region, thereby making it possible to measure the current and identify the current flowing into the parasitic diodes.
When the parasitic diodes consist of a first region of a first conduction type in a semiconductor substrate, and a second region of a second conduction type formed on the surface layer of the substrate, a third region with the same conduction type, impurity concentration and depth as the second region is formed on the surface layer of the first region, while the current flowing into the parasitic diodes consisting of the first and the third regions is drawn out from the electrode making contact with the third region, thereby making it possible to measure the current and identify the current flowing into the parasitic diodes.
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