Invention Publication
- Patent Title: Integrated circuit with silicon contact to silicide
- Patent Title (中): 集成电路与硅接触硅胶
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Application No.: EP92311249.4Application Date: 1992-12-10
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Publication No.: EP0550171A3Publication Date: 1993-09-08
- Inventor: Lee, Kuo-Hua , Yu, Chen-Hua Douglas
- Applicant: AT&T Corp.
- Applicant Address: 32 Avenue of the Americas New York, NY 10013-2412 US
- Assignee: AT&T Corp.
- Current Assignee: AT&T Corp.
- Current Assignee Address: 32 Avenue of the Americas New York, NY 10013-2412 US
- Agency: Watts, Christopher Malcolm Kelway, Dr.
- Priority: US814952 19911230
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285
Abstract:
A method is disclosed of making contacts to a metal silicide layer (5) in an integrated circuit. Normally polycrystalline silicon is used, but it is found that spikes are then formed. In the present invention a layer (11) of amorphous silicon (α=Si) is deposited at a temperature less than the recrystallization temperature (which is about 575°C) and then implanted with a dopant (e.g.P) having the peak of its special distribution within the layer, spaced from the interfaces. It was found that spikes were formed, and, when the deposition temperature was below about 550°C none at all were observed.
Public/Granted literature
- EP0550171B1 Integrated circuit with silicon contact to silicide Public/Granted day:1996-10-23
Information query
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