发明公开
EP0550404A1 A method of making a capacitive coupling device, especially in an EEPROM
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一种用于制造电容耦合装置，特别是用于一个EEPROM过程。
- 专利标题： A method of making a capacitive coupling device, especially in an EEPROM
- 专利标题（中）： 一种用于制造电容耦合装置，特别是用于一个EEPROM过程。
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申请号： EP93102713.0申请日： 1985-11-05
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公开(公告)号： EP0550404A1公开(公告)日： 1993-07-07
- 发明人: Mukherjee Satyen , Chang,Thomas
- 申请人： ROHM CORPORATION
- 申请人地址： 2150 Commerce Drive San Jose, CA 95161 US
- 专利权人： ROHM CORPORATION
- 当前专利权人： ROHM CORPORATION
- 当前专利权人地址： 2150 Commerce Drive San Jose, CA 95161 US
- 代理机构： Zwirner, Gottfried, Dipl.-Ing. Dipl.-W.-Ing.
- 优先权： US673946 19841121
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
A method of making a capacitive coupling device, especially in a transistor of an EEPROM, and such device. The interpoly dielectric layer (66) between control gate (68) and floating gate (64) consists of a thin layer of oxide and a layer of tantalum pentoxide so as to obtain a high capacitance value with a small physical size. This allows EEPROM cells which require substantially lower programming and erasing voltages.
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