A light emitting diode (LED) 100, 200, 200' and 300, including a light generation region 103, 203, 203', 303, situated on a light-absorbing substrate 105, 205, 205', 305, also includes a thick transparent layer 102, 204, 204', 302, 304, which ensures that an increased amount of light is emitted from the sides 111, 211, 211', 311, of the LED and only a minimum amount of light is absorbed by the substrate 105, 205, 205', 305. The thickness of the transparent layer 102, 204, 204', 302, 304, is determined as a function of its width and the critical angle at which light is internally reflected within the transparent layer. The thick transparent layer is located either above, below or both above and below the light generation region 103, 203, 203', 303. The thick transparent layer 102, 204, 204', 302, 304, may be made of materials and with fabrication processes different from the light generation region.