发明公开
- 专利标题： Method of reforming an insulating film in a semiconductor device and apparatus therefor
- 专利标题（中）： 重整在半导体器件及其装置的绝缘层的方法。
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申请号： EP92110569.8申请日： 1992-06-23
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公开(公告)号： EP0575650A1公开(公告)日： 1993-12-29
- 发明人: Maeda, Kazuo, c/o Semiconductor Process , Tokumasu, Noboru, c/o Semiconductor Process , Nishimoto, Yuko, c/o Semiconductor Process
- 申请人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD. , ALCAN- TECH CO., INC. , CANON SALES CO., INC.
- 申请人地址： 13-29, Konan 2-chome Minato-ku, Tokyo 108 JP
- 专利权人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD.,ALCAN- TECH CO., INC.,CANON SALES CO., INC.
- 当前专利权人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD.,ALCAN- TECH CO., INC.,CANON SALES CO., INC.
- 当前专利权人地址： 13-29, Konan 2-chome Minato-ku, Tokyo 108 JP
- 代理机构： Schwabe - Sandmair - Marx
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105
摘要：
The insulating film formed by CVD while heating is irradiated with ultraviolet rays. The process may be repeated. The apparatus therefore is also described.
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