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1.发明授权Method of manufacturing a silicon oxide film and an oxide based glass for semiconductor devices 失效一种制造用于半导体器件的氧化硅膜和含氧化物的玻璃膜的方法
公开(公告)号：EP0470632B1
公开(公告)日：1996-10-02
申请号：EP91113378.3
申请日：1991-08-09
发明人： Maeda, Kazuo, c/o Semiconductor Process , Tokumasu, Noboru, c/o Semiconductor Process , Nishimoto, Yuko, c/o Semiconductor Process
IPC分类号： H01L21/316
CPC分类号： H01L21/02129 , C23C16/401 , H01L21/02164 , H01L21/02271 , H01L21/02315 , H01L21/31612 , H01L21/31625 , Y10S438/974
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2.发明授权Method of treating an insulating film in a semiconductor device and apparatus therefor 失效在半导体器件及其装置处理的绝缘层的方法
公开(公告)号：EP0575650B1
公开(公告)日：1999-01-07
申请号：EP92110569.8
申请日：1992-06-23
发明人： Maeda, Kazuo, c/o Semiconductor Process , Tokumasu, Noboru, c/o Semiconductor Process , Nishimoto, Yuko, c/o Semiconductor Process
IPC分类号： H01L21/3105
CPC分类号： H01L21/67115 , C23C16/405 , C23C16/56 , H01L21/02129 , H01L21/02164 , H01L21/02183 , H01L21/022 , H01L21/02271 , H01L21/02348 , H01L21/3105 , H01L21/31604 , H01L21/31612 , H01L21/31625 , H01L21/76801 , H01L21/76825 , H01L21/76826 , Y10S148/003 , Y10S148/004 , Y10S148/09 , Y10S148/093
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3.发明授权Process for producing a CVD-SiO2 film according to a TEOS-O3 reaction 失效一种用于在具有TEOS-O3反应使用CVD SiO 2膜的制备方法。
公开(公告)号：EP0435161B1
公开(公告)日：1995-02-15
申请号：EP90124837.7
申请日：1990-12-19
发明人： Maeda, Kazuo, c/o Semiconductor Process , Tokumasu, Noboru, c/o Semiconductor Process , Nishimoto, Yuko, c/o Semiconductor Process
IPC分类号： H01L21/316 , C23C16/40
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/022 , H01L21/02271 , H01L21/31612 , Y10S148/118
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4.发明公开Method of manufacturing a silicon oxide film and an oxide based glass for semiconductor devices 失效一种用于制造氧化硅膜和用于半导体器件的含氧化物的玻璃膜的方法。
公开(公告)号：EP0470632A2
公开(公告)日：1992-02-12
申请号：EP91113378.3
申请日：1991-08-09
发明人： Maeda, Kazuo, c/o Semiconductor Process , Tokumasu, Noboru, c/o Semiconductor Process , Nishimoto, Yuko, c/o Semiconductor Process
IPC分类号： H01L21/316
CPC分类号： H01L21/02129 , C23C16/401 , H01L21/02164 , H01L21/02271 , H01L21/02315 , H01L21/31612 , H01L21/31625 , Y10S438/974
摘要： According to the present invention, there are provided a manufacturing method of a semiconductor device, characterized in that, after a surface of a substrate is reformed by performing high frequency plasma irradiation processing in a state that the substrate is heated, organic silane and ozone are mixed with each other, and a silicon oxide film is formed on the substrate under normal pressure or reduced pressure and also a manufacturing method of a semiconductor device, characterized in that, after a surface of a substrate is reformed by performing high frequency plasma irradiation processing in a state that the substrate is heated, organic silane, gas containing impurities such as phosphorus or boron and ozone are mixed, and a PSG film, a BSG film, a BPSG film and the like are formed on the substrate under normal pressure or reduced pressure.
摘要翻译： 。根据本发明，提供了一种半导体器件，在为特征的制造方法中，基板的表面之后，通过在状态没有基板被加热时，有机硅烷和臭氧进行高频等离子体照射处理重整 海誓山盟混合，和氧化硅膜形成于在常压下将底物或减压，从而半导体器件，在该表征，一个基板的表面上之后的制造方法是通过执行高频等离子体照射处理重整 的状态下，确实是含有杂质加热，有机硅烷气体的底物：如磷或硼和臭氧混合，和PSG电影，BSG电影，BPSG薄膜等在常压下形成在基板或缩小 压力。
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5.发明公开Method of reforming an insulating film in a semiconductor device and apparatus therefor 失效重整在半导体器件及其装置的绝缘层的方法。
公开(公告)号：EP0575650A1
公开(公告)日：1993-12-29
申请号：EP92110569.8
申请日：1992-06-23
发明人： Maeda, Kazuo, c/o Semiconductor Process , Tokumasu, Noboru, c/o Semiconductor Process , Nishimoto, Yuko, c/o Semiconductor Process
IPC分类号： H01L21/3105
CPC分类号： H01L21/67115 , C23C16/405 , C23C16/56 , H01L21/02129 , H01L21/02164 , H01L21/02183 , H01L21/022 , H01L21/02271 , H01L21/02348 , H01L21/3105 , H01L21/31604 , H01L21/31612 , H01L21/31625 , H01L21/76801 , H01L21/76825 , H01L21/76826 , Y10S148/003 , Y10S148/004 , Y10S148/09 , Y10S148/093
摘要： The insulating film formed by CVD while heating is irradiated with ultraviolet rays. The process may be repeated. The apparatus therefore is also described.
摘要翻译： 绝缘膜形成的，通过CVD而加热用紫外线照射。 该过程可以被重复。 该装置因此这样描述。
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6.发明公开Process for forming SiO2 film with polysiloxane/ozone reaction 失效一种用于在具有聚硅氧烷/臭氧反应和半导体器件的SiO 2膜的制备方法。
公开(公告)号：EP0436185A1
公开(公告)日：1991-07-10
申请号：EP90124838.5
申请日：1990-12-19
发明人： Maeda, Kazuo, c/o Semiconducto Process , Tokumasu, Noboru, c/o Semiconductor Process , Nishimoto, Yuko, c/o Semiconductor Process
IPC分类号： H01L21/316 , C23C16/40
CPC分类号： H01L21/02271 , C23C16/401 , H01L21/02129 , H01L21/02164 , H01L21/02216 , H01L21/31612 , H01L21/31625
摘要： In a process for forming a CVD film, a polysiloxane compound having at least two silicon-oxygen bonds is reacted with ozone to form an SiO₂ film. If desired, the reaction may be effected in the presence of a gas containing an impurity mixed with the polysiloxane compound and ozone to form a PSG, BSG or BPSG film. In a semiconductor device, the SiO₂ film, or the PSG, BSG or BPSG film is used as a planarizing film, an interlayer insulating film, or a cover insulating film.
摘要翻译： 在用于形成CVD电影的方法，具有至少两个硅 - 氧键的聚硅氧烷化合物与臭氧反应形成的SiO 2的电影。 如果需要清除，所述反应可以在存在下进行气 - 含杂质与聚硅氧烷化合物和臭氧，以形成PSG，BSG或BPSG电影混合。 在一个半导体器件中，SiO 2膜，电影，或PSG，BSG或BPSG膜被用作平坦化膜的上层间绝缘膜，电影，或覆盖绝缘成膜。
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7.发明授权
公开(公告)号：EP0436185B1
公开(公告)日：1996-03-20
申请号：EP90124838.5
申请日：1990-12-19
发明人： Maeda, Kazuo, c/o Semiconducto Process , Tokumasu, Noboru, c/o Semiconductor Process , Nishimoto, Yuko, c/o Semiconductor Process
IPC分类号： H01L21/316 , C23C16/40
CPC分类号： H01L21/02271 , C23C16/401 , H01L21/02129 , H01L21/02164 , H01L21/02216 , H01L21/31612 , H01L21/31625
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8.发明公开Method of manufacturing a silicon oxide film and an oxide based glass for semiconductor devices 失效半导体器件制造硅氧烷膜和氧化物玻璃的方法
公开(公告)号：EP0470632A3
公开(公告)日：1993-04-21
申请号：EP91113378.3
申请日：1991-08-09
发明人： Maeda, Kazuo, c/o Semiconductor Process , Tokumasu, Noboru, c/o Semiconductor Process , Nishimoto, Yuko, c/o Semiconductor Process
IPC分类号： H01L21/316
CPC分类号： H01L21/02129 , C23C16/401 , H01L21/02164 , H01L21/02271 , H01L21/02315 , H01L21/31612 , H01L21/31625 , Y10S438/974
摘要： According to the present invention, there are provided a manufacturing method of a semiconductor device, characterized in that, after a surface of a substrate is reformed by performing high frequency plasma irradiation processing in a state that the substrate is heated, organic silane and ozone are mixed with each other, and a silicon oxide film is formed on the substrate under normal pressure or reduced pressure and also a manufacturing method of a semiconductor device, characterized in that, after a surface of a substrate is reformed by performing high frequency plasma irradiation processing in a state that the substrate is heated, organic silane, gas containing impurities such as phosphorus or boron and ozone are mixed, and a PSG film, a BSG film, a BPSG film and the like are formed on the substrate under normal pressure or reduced pressure.
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9.发明公开Process for producing a CVD-SiO2 film according to a TEOS-O3 reaction 失效Verfahren zur Herstellung eines CVD SiO2 Films mit einer TEOS-O3 Reaktion。
公开(公告)号：EP0435161A1
公开(公告)日：1991-07-03
申请号：EP90124837.7
申请日：1990-12-19
发明人： Maeda, Kazuo, c/o Semiconductor Process , Tokumasu, Noboru, c/o Semiconductor Process , Nishimoto, Yuko, c/o Semiconductor Process
IPC分类号： H01L21/316 , C23C16/40
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/022 , H01L21/02271 , H01L21/31612 , Y10S148/118
摘要： In a process for producing a semiconductor device, deposition of a CVD-SiO₂ film (32) at a given first O₃ concentration according to a TEOS-O₃ reaction is followed by further deposition of a CVD-SiO₂ film (34) at a second O₃ concentration higher than the first O₃ concentration according to the TEOS-O₃ reaction to form a CVD-SiO₂ film having a predetermined thickness and a surface little uneven.
摘要翻译： 在制造半导体器件的工艺中，按照TEOS-O 3反应在给定的第一O 3浓度下沉积CVD-SiO 2膜（32），随后在第二个O 3处进一步沉积CVD-SiO 2膜（34） 浓度高于根据TEOS-O 3反应的第一O 3浓度，以形成具有预定厚度和表面几乎不均匀的CVD-SiO 2膜。
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