发明授权
EP0575968B1 Manufacturing method of an oxide superconductor with high critical current density
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的氧化物超导体的制造方法,具有高的临界电流密度
- 专利标题: Manufacturing method of an oxide superconductor with high critical current density
- 专利标题(中): 的氧化物超导体的制造方法,具有高的临界电流密度
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申请号: EP93109970.9申请日: 1993-06-22
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公开(公告)号: EP0575968B1公开(公告)日: 1997-04-09
- 发明人: Okamura, Osamu, c/o Supercond. Research Lab. Int. , Kume, Atsushi, c/o Supercond. Research Lab. Int. , Shiohara, Yuh, c/o Supercond. Research Lab. Int.
- 申请人: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER , THE KANSAI ELECTRIC POWER CO., INC. , FUJIKURA LTD.
- 申请人地址: No. 34-3, Shinbashi 5-chome Minato-ku Tokyo JP
- 专利权人: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER,THE KANSAI ELECTRIC POWER CO., INC.,FUJIKURA LTD.
- 当前专利权人: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER,THE KANSAI ELECTRIC POWER CO., INC.,FUJIKURA LTD.
- 当前专利权人地址: No. 34-3, Shinbashi 5-chome Minato-ku Tokyo JP
- 代理机构: Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
- 优先权: JP163168/92 19920622
- 主分类号: H01L39/24
- IPC分类号: H01L39/24
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